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Growth method for lanthanum bromide scintillating crystal and obtained crystal

A growth method and technology of scintillation crystals, which are applied in the field of optical materials, can solve problems affecting the optical quality of crystals, interfering with crystal growth, etc., and achieve the effect of improving optical quality

Active Publication Date: 2017-10-24
SINOMA SYNTHETIC CRYSTALS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that the requirements for the lowering device are particularly strict, and the small vibration of the lowering device will cause the small vibration of the crucible, which will interfere with the crystal growth and affect the optical quality of the crystal.

Method used

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  • Growth method for lanthanum bromide scintillating crystal and obtained crystal

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] 1) Weighing of raw materials: in the glove box, respectively weigh anhydrous LaBr with a purity of 99.99%. 3 Raw material 700g, CeBr 3 37 grams of raw materials were mixed evenly in agate and platinum, and then placed in a pre-treated quartz crucible. A quartz tube is arranged on the quartz crucible.

[0029] 2) Crucible fusion sealing: After taking it out from the glove box, quickly evacuate to 10 -3 Pa, seal the nozzle of the quartz crucible with an oxyhydrogen flame.

[0030] 3) Crystal growth: Place the crucible in the upper temperature zone of the two-stage temperature-controlled descending furnace. The temperature in the upper temperature zone rises to 850°C, and the temperature in the lower temperature zone rises to 780°C. Keep the temperature constant for 12 hours to completely melt the raw materials. Raise the furnace body at a speed of 500mm / h until the bottom of the crucible is located in the gradient area, and then move the furnace body at a speed of 1±0....

Embodiment 2

[0033] 1) Weighing of raw materials: in the glove box, respectively weigh anhydrous LaBr with a purity of 99.99%. 3 Raw material 150g, CeBr 3 6.27 grams of raw materials were uniformly mixed in agate and platinum, and then placed in a pre-treated quartz crucible.

[0034] 2) Crucible fusion sealing: After taking it out from the glove box, quickly evacuate to 10 -4 Pa, seal the nozzle of the quartz crucible with an oxyhydrogen flame.

[0035] 3) Crystal growth: Place the crucible in the high-temperature zone of the two-stage temperature-controlled drop furnace. The temperature in the upper temperature zone rises to 870°C, and the temperature in the lower temperature zone rises to 750°C. Keep the temperature constant for 10 hours to completely melt the raw materials. Raise the furnace body at a speed of 3000mm / h until the bottom of the crucible is located in the gradient area. Then move the furnace body at a speed of 2±0.5mm / h for crystal growth. After the crystal growth is ...

Embodiment 3

[0038] 1) Weighing of raw materials: in the glove box, respectively weigh anhydrous LaBr with a purity of 99.99%. 3 Raw material 300g, CeBr 3 3.04 grams of raw materials were mixed evenly in agate and platinum, and then placed in a pre-treated quartz crucible.

[0039] 2) Crucible fusion sealing: After taking it out from the glove box, quickly evacuate to 10 -5 Pa, seal the nozzle of the quartz crucible with an oxyhydrogen flame.

[0040] 3) Crystal growth: Place the crucible in the high-temperature zone of the two-stage temperature-controlled drop furnace. The temperature in the upper temperature zone rises to 880°C, and the temperature in the lower temperature zone rises to 720°C. Keep the temperature constant for 15 hours to completely melt the raw materials. Raise the furnace body at a speed of 5000mm / h until the bottom of the crucible is located in the gradient area. Then move the furnace body up at a speed of 1±0.5mm / h for crystal growth. After the crystal growth is ...

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Abstract

The invention provides a growth method for lanthanum bromide scintillating crystal. The method comprises the following operations: loading raw materials into a crucible, putting the crucible into a fall furnace for heating and melting; keeping the crucible fixed and slowly moving the furnace body, so that the crucible passes through a temperature gradient area, the raw materials crystallize at the bottom of the crucible, and the crystal gradually grows along the direction same as motion of the furnace body along with continuous motion of the furnace body. By using the growth method provided by the invention, the crucible is fixed and crystal growth is achieved by virtue of the motion of the furnace body, impurities, such as inclusions and bubbles introduced by interference of micro-vibration of a down-lead device with crystal growth in a traditional LaBr3:Ce scintillating crystal growth method can be effectively avoided, the optical quality of the crystal can be significantly improved, and the growth method is especially suitable for growth of large-size and high-optical quality LaBr3:Ce scintillating crystal.

Description

technical field [0001] The invention belongs to the field of optical materials, and in particular relates to a growth method of lanthanum bromide crystals. Background technique [0002] Scintillation crystals are a class of functional materials that can convert high-energy rays such as X and γ into ultraviolet-visible light. As the core components of high-end detection equipment, they are widely used in security inspection, medical treatment, oil exploration and other fields, and the industrial scale they contain is extremely huge. [0003] Ce-doped lanthanum bromide (LaBr 3 :Ce) scintillation crystal is currently the hottest new inorganic scintillation crystal material in international research and application, with high light output (greater than 60000Ph / MeV), short decay time (less than 30ns), high energy resolution (less than 4%) Its performance has completely surpassed the traditional high light output thallium-doped sodium iodide (NaI:Tl) scintillation crystal. It is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/12C30B11/02
Inventor 王海丽陈建荣黄存新杨春和韩加红
Owner SINOMA SYNTHETIC CRYSTALS CO LTD
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