Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Microdrop ion sputtering technology and water turbine preparation method

A technology of ion sputtering and sputtering, which is applied in the direction of sputtering plating, ion implantation plating, metal material coating process, etc., and can solve the problems of deformation of the substrate to be sputtered, excessive particle size, large temperature difference on both sides, etc. , to achieve the effect of improving the protection effect, enhancing the binding force and ensuring the integrity

Active Publication Date: 2017-10-24
CHENGDU TIANFU NEW AREA HECHUAN SCI & TECH CO LTD
View PDF11 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When sputtering the printing layer, the temperature of the printing layer is extremely high, so the temperature of the part where the printing layer acts on one side of the substrate to be sputtered rises instantaneously. side, the temperature is low, and the temperature difference between the two sides is large, so it is easy to cause deformation of the substrate to be sputtered
At the same time, the particle size of the droplets acting on the printing layer of the substrate to be sputtered is large, and it is easy to cause deformation. At the same time, the particle size is too large, which is not conducive to the uniform coating of the printing layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] This embodiment provides a droplet ion sputtering process, in which the substrate to be sputtered is manually polished and electrostatically removed, wherein the polishing time is 7 minutes, and the electrostatic dust removal time is 4 minutes.

[0032] Then put the prepared printing layer raw material into the accommodating cavity and heat the printing layer raw material, so that the solid printing layer raw material melts into a liquid printing layer liquid, and the specific heating temperature is 1200°C. The printing layer liquid is passed through the atomizing nozzle so that the printing layer liquid is atomized into droplets and sputtered on the surface of the substrate to be sputtered, wherein the particle size of the atomized droplets is 10 nanometers.

[0033] While sputtering the raw materials of the printing layer, the substrate to be sputtered is cooled, and cooling water is used to cool the temperature, and the flow rate of the cooling water is 25dm 3 / min. ...

Embodiment 2

[0037] This embodiment provides a droplet ion sputtering process, in which the substrate to be sputtered is manually polished and electrostatically removed, wherein the polishing time is 10 minutes, and the electrostatic dust removal time is 3 minutes.

[0038] Then put the prepared printing layer raw material into the accommodating cavity and heat the printing layer raw material, so that the solid printing layer raw material melts into a liquid printing layer liquid, and the specific heating temperature is 1400°C. The printing layer liquid is passed through the atomizing nozzle so that the printing layer liquid is atomized into droplets and sputtered on the surface of the substrate to be sputtered, wherein the particle size of the atomized droplets is 20 nanometers.

[0039] While sputtering the raw materials of the printing layer, the substrate to be sputtered is cooled, and the cooling water is used to cool down, and the flow rate of the cooling water is 50dm 3 / min. At th...

Embodiment 3

[0043] This embodiment provides a droplet ion sputtering process, in which the substrate to be sputtered is manually polished and electrostatically removed, wherein the polishing time is 5 minutes, and the electrostatic dust removal time is 5 minutes.

[0044] Then put the prepared printing layer raw material into the accommodating cavity and heat the printing layer raw material, so that the solid printing layer raw material melts into a liquid printing layer liquid, and the specific heating temperature is 1500°C. The printing layer liquid is passed through the atomizing nozzle so that the printing layer liquid is atomized into droplets and sputtered on the surface of the substrate to be sputtered, wherein the particle size of the atomized droplets is 15 nanometers.

[0045] While sputtering the raw material of the printing layer, the substrate to be sputtered is cooled, and the cooling water is used to cool down, and the flow rate of the cooling water is 20dm 3 / min. At the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of microdrop ion sputtering in added material manufacturing, in particular to a microdrop ion sputtering technology and a water turbine preparation method. The process uses two sputtering heads for sputtering two opposite surfaces of a basal body to be sputtered at the same time to form a printing layer and a protecting layer, wherein the particle sizes of printing layer raw materials used for sputtering are 10-20 nanometers. The process can perform the printing layer raw material sputtering on relative areas of two opposite surfaces of the basal body to be sputtered at the same time, so that deformation caused by nonuniform heating is reduced, and such defects as cracks and bubbles of the basal body to be sputtered are solved.

Description

technical field [0001] The invention relates to the technical field of additive manufacturing micro-droplet ion sputtering, and in particular to a micro-droplet ion sputtering process and a method for preparing a water turbine. Background technique [0002] Sputtering technology is to sputter one or more printing layers on the substrate to be sputtered to correct or improve the performance of the substrate. However, the existing sputtering method is single-side sputtering, that is, sputtering is performed on one side of the substrate to be sputtered first, and then sputtering is performed on the other side after the sputtering is completed. When sputtering the printing layer, the temperature of the printing layer is extremely high, so the temperature of the part where the printing layer acts on one side of the substrate to be sputtered rises instantaneously. side, the temperature is low, and the temperature difference between the two sides is large, so it is easy to cause d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34B33Y10/00
Inventor 鲁伟员吴江李信王建波
Owner CHENGDU TIANFU NEW AREA HECHUAN SCI & TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com