Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Quantum dot photoelectric detector and preparation method thereof

A photodetector and quantum dot technology, applied in the field of photodetection, can solve the problems of difficult integration, increased device size, high cost, etc., and achieves the effects of fast response, simple preparation method and high sensitivity

Active Publication Date: 2017-10-20
HUAZHONG UNIV OF SCI & TECH
View PDF4 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Traditional photodetectors respond to light waves with energy higher than the energy band gap, and optical devices such as gratings and filters need to be added to increase the selectivity of the detector to light of a specific wavelength, resulting in increased device volume, difficulty in integration, and high cost. high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot photoelectric detector and preparation method thereof
  • Quantum dot photoelectric detector and preparation method thereof
  • Quantum dot photoelectric detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0027] The metal surface plasmon and the incident light couple with each other, and realize resonance for the photoelectric wave of a specific wavelength, which is beneficial to enhance the light absorption of the quantum dot film. The photoelectric resonance wavelength is controlled by adjusting the periodic structure of the microstructure array, and the photoelectric conversion characteristics...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a quantum dot photoelectric detector and preparation method thereof. The preparation method includes the steps of coating PMMA photoresist on an ITO glass substrate in a spinning mode; performing photoresist exposure and microstructural graph defining; evaporating a metal film of a certain thickness; performing photoresist stripping and generating a metal microstructure; coating prepared quantum dots on the abovementioned substrate in a spinning or spraying mode to form a film; and continuing to evaporate metal of a certain thickness to form a back bottom electrode, thereby completing device preparation. The preparation method provided by the invention utilizes narrow-band filtering and optical field enhancing functions of a metal microstructure, performs wavelength modulation and sensitivity enhancement on quantum dot photoelectric response, and a quantum dot film photoelectric effect is utilized, so that current between the ITO and the back bottom electrode changes remarkably. The preparation method selects appropriate metal and a quantum dot material system, and adjusts the structural design of the metal microstructure array and the quantum dot size, thereby realizing a high-sensitivity tunable narrow-band photoelectric detector.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and relates to a quantum dot photodetector and a preparation method thereof. Background technique [0002] The principle of semiconductor photoconductive photodetector is that radiation causes the conductivity of the irradiated semiconductor material to change, and it plays an important role in many fields of military and national economy. In the visible or near-infrared band, it is mainly used for ray measurement and detection, industrial automatic control, photometry, optical fiber communication, etc.; in the infrared band, it is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing, etc. Due to the three-dimensional confinement effect of quantum dots, electron energy has quantization characteristics in three dimensions, so it has a size-related energy band gap, and the absorption wavelength can be tuned. Colloidal quantum dots are prepared by coll...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0232H01L31/0352H01L31/09H01L31/18B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01L31/02327H01L31/035218H01L31/09H01L31/18Y02P70/50
Inventor 刘欢易飞张宝晖杨奥唐江宋海胜
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com