Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A display panel and its manufacturing method, and a display device

A technology for a display panel and a manufacturing method, applied in the field of display panels, manufacturing methods, and display devices, capable of solving problems such as adverse effects of resin materials, affecting display panel performance, and increasing manufacturing time, so as to shorten manufacturing time, avoid adverse effects, To avoid the effect of threshold voltage shift

Active Publication Date: 2020-03-06
BOE TECH GRP CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the annealing process is an additional step in the display panel manufacturing process, it will lead to an increase in production time and a decrease in production capacity
In addition, the annealing process will also adversely affect the performance of the resin material, which will also affect the performance of the display panel

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A display panel and its manufacturing method, and a display device
  • A display panel and its manufacturing method, and a display device
  • A display panel and its manufacturing method, and a display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Such as figure 1 As shown, this embodiment provides a display panel, including a base substrate 1 , a thin film transistor 2 formed on the base substrate 1 , and a light emitting structure 3 formed on the side of the thin film transistor 2 facing away from the base substrate 1 . Wherein, the thin film transistor 2 includes a polysilicon layer 21 located between the light emitting structure 3 and the base substrate 1 . A light-shielding layer 4 for blocking ultraviolet light is also formed between the polysilicon layer 21 and the light-emitting structure 3 . The orthographic projection of the light-shielding layer 4 on the base substrate 1 covers the orthographic projection of the polysilicon layer 21 on the base substrate 1 .

[0033] It can be understood that the light emitting structure 3 may specifically include an anode 31 , a light emitting layer 32 and a cathode 33 , wherein the anode 31 is electrically connected to the thin film transistor 2 . After the anode 31...

Embodiment 2

[0046] This embodiment provides a method for manufacturing a display panel, and the method for manufacturing a display panel is applied to the display panel described in Embodiment 1.

[0047] Such as Figure 5 As shown, the manufacturing method of the display panel specifically includes:

[0048] Step S1: providing a base substrate.

[0049] Step S2: forming a thin film transistor and a light-shielding layer for blocking ultraviolet light on the base substrate, so that the thin film transistor includes a polysilicon layer; the light-shielding layer is located on the side of the polysilicon layer facing away from the base substrate, and the light-shielding layer is projected on the front of the base substrate Orthographic projection of the covering polysilicon layer on the base substrate.

[0050] Step S3: forming a light-emitting structure on the side of the light-shielding layer facing away from the polysilicon layer.

[0051] Using the manufacturing method of the display...

Embodiment 3

[0065] This embodiment provides a display device, and the display device includes the display panel as described in the first embodiment.

[0066] Since the display device provided in this embodiment includes the display panel as described in Embodiment 1, the display device can avoid the adverse effect of ultraviolet light on the polysilicon layer, thereby avoiding the problem of threshold voltage shift of the thin film transistor. Moreover, since no additional annealing process is required, the manufacturing time of the display device is shortened and the production capacity is improved.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a display panel, a manufacturing method, and a display device, which relate to the field of display technology, and can avoid adverse effects of ultraviolet light on polysilicon layers, thereby avoiding the problem of threshold voltage drift of thin film transistors. Among them, the display panel includes a base substrate, a thin film transistor formed on the base substrate, and a light emitting structure formed on the side of the thin film transistor facing away from the base substrate; wherein, the thin film transistor includes a light emitting structure located between the light emitting structure and the base substrate A polysilicon layer; a light-shielding layer for blocking ultraviolet light is formed between the polysilicon layer and the light-emitting structure, and the orthographic projection of the light-shielding layer on the base substrate covers the orthographic projection of the polysilicon layer on the base substrate. The above-mentioned display panel is used to realize screen display.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a display panel, a manufacturing method, and a display device. Background technique [0002] In a display panel based on LTPS (Low temperature polysilicon technology, low temperature polysilicon technology), it includes a base substrate, a thin film transistor formed on the base substrate, a pixel defining layer, a spacer and a light emitting structure. Wherein, the pixel defining layer and the spacer can be manufactured separately, or can be manufactured simultaneously by using an HT (Half Tone, half tone) process. [0003] In the manufacturing process of the display panel, the pixel defining layer and the spacer are formed after the formation of the thin film transistor and the anode in the light-emitting structure. However, since the light-emitting layer in the light-emitting structure needs to be formed , it is necessary to perform ultraviolet light exposure treatme...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G09F9/00H01L27/12
CPCG09F9/00H01L27/1248H01L29/66757H01L29/78633H01L29/78675H01L27/1222H01L29/42384H01L29/41733
Inventor 姚琪曹占锋张锋李海旭班圣光刘志勇
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com