Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

MEMS chip

A chip and sensitive film technology, applied in the field of MEMS chips, can solve problems such as stress reduction and inability to fully release, and achieve the effect of improving service life and preventing distortion

Pending Publication Date: 2017-10-13
GOERTEK MICROELECTRONICS CO LTD
View PDF9 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, using methods such as opening slits on the diaphragm and making a textured film structure to reduce stress, these methods only release part of the stress to a certain extent, and cannot completely release it.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MEMS chip
  • MEMS chip
  • MEMS chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

[0029] The following description of at least one exemplary embodiment is merely illustrative in nature and in no way taken as limiting the invention, its application or uses.

[0030] Techniques and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques and devices should be considered part of the description.

[0031] In all examples shown and discussed herein, any specific values ​​should be construed as illustrative only, and not as limiting. Therefore, other instances of the exemplary embodiment may have different values.

...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an MEMS chip. The MEMS chip comprises a substrate, and a polar plate supported on the substrate. Containing space is formed between the substrate and the polar plate. The MEMS chip further comprises a sensitive film freely arranged in the containing space, and a capacitor structure is formed by the sensitive film and the polar plate. A limiting column is arranged in the containing space, and the limiting column penetrates through the sensitive film to define the vibrating direction of the sensitive film. According to the MEMS chip, through the arrangement of the limiting column, the sensitive film can vibrate up and down along the limiting column, the limiting column can effectively prevent transverse swinging of the sensitive film in the vibrating process, it is avoided that the sensitive film warps due to too high amplitude, and the service life of the MEMS chip is prolonged.

Description

technical field [0001] The present invention relates to the field of micro-electromechanical technology, and more specifically, the present invention relates to a MEMS chip. Background technique [0002] A traditional MEMS microphone chip includes a substrate and a sensitive film and a plate fixed on the substrate. There is a certain gap between the sensitive film and the plate, so that a flat capacitor structure can be formed between the sensitive film and the plate. Since the sensitive film is fixedly connected to the substrate, the sensitive film is easily bent and deformed when subjected to impact (such as blowing, mechanical shock and drop), resulting in damage. [0003] In order to solve this technical problem, it is proposed that the sensitive film is freely arranged in the accommodation space enclosed by the electrode plate and the substrate. In this way, the sensitive membrane is no longer subjected to stretching forces. When subjected to external impact, the defo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B81B3/00B81B7/02H04R19/04
CPCH04R19/04B81B3/0035B81B7/02B81B2201/0257
Inventor 李江龙郝红蕾王宇张鑫鑫
Owner GOERTEK MICROELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com