UV detector with a non-polar absorption layer
An ultraviolet detector, non-polar technology, applied in the field of ultraviolet detectors, can solve the problem of low quantum efficiency of detectors, improve quantum efficiency and sensitivity, improve photogenerated current, increase absorption coefficient and lateral carrier mobility Effect
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[0017] Such as figure 1 As shown, an ultraviolet detector with a non-polar absorption layer includes: a substrate 101, an AlN intermediate layer 102, a non-doped AlGaN buffer layer 103, an n-type AlGaN layer 104, a non-polar Sex Al x Ga 1-x N / Al y Ga 1-y N multi-quantum well absorption, separation layer 105, non-doped Al z Ga 1-z N multiplication layer 106, p-type AlGaN layer 107, p-type ohmic electrode 108 arranged on p-type AlGaN layer 107, n-type ohmic electrode 109 arranged on n-type AlGaN layer 104, wherein 0<x<y<z< 1.
[0018] non-polar Al x Ga 1-x N / Al y Ga 1-y The material of the N multi-quantum well absorption and separation layer 105 can be non-polar surface materials such as (11-20) and (10-10) surfaces.
[0019] The substrate 101 can be polar, semi-polar, or non-polar oriented sapphire, silicon carbide, silicon, zinc oxide, gallium nitride, aluminum nitride, and the like.
[0020] The thickness of the AlN intermediate layer 102 is 15-5000nm, the thickn...
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