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UV detector with a non-polar absorption layer

An ultraviolet detector, non-polar technology, applied in the field of ultraviolet detectors, can solve the problem of low quantum efficiency of detectors, improve quantum efficiency and sensitivity, improve photogenerated current, increase absorption coefficient and lateral carrier mobility Effect

Active Publication Date: 2017-10-10
SOUTHEAST UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, the existing technology cannot fundamentally solve the problem of low quantum efficiency of the detector caused by the compensation effect of the polarized electric field on the built-in electric field when the polar material is used as the absorbing layer.

Method used

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Embodiment Construction

[0017] Such as figure 1 As shown, an ultraviolet detector with a non-polar absorption layer includes: a substrate 101, an AlN intermediate layer 102, a non-doped AlGaN buffer layer 103, an n-type AlGaN layer 104, a non-polar Sex Al x Ga 1-x N / Al y Ga 1-y N multi-quantum well absorption, separation layer 105, non-doped Al z Ga 1-z N multiplication layer 106, p-type AlGaN layer 107, p-type ohmic electrode 108 arranged on p-type AlGaN layer 107, n-type ohmic electrode 109 arranged on n-type AlGaN layer 104, wherein 0<x<y<z< 1.

[0018] non-polar Al x Ga 1-x N / Al y Ga 1-y The material of the N multi-quantum well absorption and separation layer 105 can be non-polar surface materials such as (11-20) and (10-10) surfaces.

[0019] The substrate 101 can be polar, semi-polar, or non-polar oriented sapphire, silicon carbide, silicon, zinc oxide, gallium nitride, aluminum nitride, and the like.

[0020] The thickness of the AlN intermediate layer 102 is 15-5000nm, the thickn...

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Abstract

The invention discloses a UV detector with a non-polar absorption layer, which comprises the following elements arranged from the bottom to the top in a successive manner: a substrate, an AlN intermediate layer, an un-doped AlGaN buffer layer, an n-type AlGaN layer and a non-polar AlxGa1-xN / AlyGa1-yN multiple quantum well absorption and isolation layer, an un-doped ALzGa1-zN multiplier layer, p-type AlGaN layer, a p-type Ohmic electrode provided on the p-type AlGaN layer, an n-type Ohmic electrode arranged on the n-type AlGaN layer, where the AlxGa1-xN / AlyGa1-yN multiple quantum well is used as the absorption layer of the UV detector. The beneficial effects of the present invention are: to fundamentally prevent the polarized electric field in the absorption layer from compensating the built-in electric field in the p-n junction and to improve the photocurrent of the ultraviolet detector; in addition, the use of the non-polar AlxGa1-xN / AlyGa1-yN multiple quantum well as the absorption layer of the UV detector can further enhance the UV absorption coefficient and lateral carrier mobility of the UV detector due to the action of the quantum effect and plays an important role in raising the quantum efficiency and the sensitivity of the UV detector.

Description

technical field [0001] The invention relates to the field of compound semiconductor optoelectronic materials and device manufacturing, in particular to an ultraviolet detector with a nonpolar absorption layer. Background technique [0002] Ultraviolet detection has important application value and broad development prospects in military and civilian fields, such as flame detection, ultraviolet warning and guidance, chemical and biological analysis, ultraviolet astronomy research, and satellite communications. AlGaN materials have great potential in the preparation of ultraviolet detectors. First of all, AlxGa1-xN material is a direct bandgap semiconductor material. By adjusting the composition x of Al, the corresponding absorption wavelength can be between 200-365nm, which just covers the solar spectrum blind zone (220nm) caused by the ozone layer absorbing ultraviolet light. -290nm). At the same time, the AlGaN-based ultraviolet detector also has the advantages of small si...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/109
CPCH01L31/035236H01L31/109
Inventor 张雄代倩吴自力崔一平
Owner SOUTHEAST UNIV
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