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Fabrication method of array substrate mother board, array substrate mother board and detection method

A technology of an array substrate and a detection method, which is applied to the coating equipment, measuring device, and exposure device of the photoengraving process, etc., can solve the problems of low efficiency and low precision, and achieve high measurement efficiency, small measurement deviation, and measurement high precision effect

Active Publication Date: 2017-09-22
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Aiming at the above-mentioned deficiencies in the prior art, the present invention provides a method for preparing an array substrate motherboard, an array substrate motherboard and a detection method, which are used to at least partly solve the existing method for detecting the position of a thin film, which has low precision and high efficiency. lower question

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  • Fabrication method of array substrate mother board, array substrate mother board and detection method
  • Fabrication method of array substrate mother board, array substrate mother board and detection method
  • Fabrication method of array substrate mother board, array substrate mother board and detection method

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Embodiment 1

[0044] Embodiment 1 of the present invention provides a method for preparing an array substrate mother board, combining Figure 1 to Figure 4 As shown, the preparation method of the array substrate motherboard includes the following steps:

[0045] Step 1, depositing the first thin film 2 on the base substrate 1, there is a first gap d1 between the edge of the first thin film 2 and the edge of the base substrate 1, such as figure 1 shown.

[0046] Specifically, the first thin film 2 is located in the middle of the base substrate 1 . The material of the first thin film 2 can be metal or metal oxide, such as copper, aluminum or indium tin oxide, or single crystal, polycrystal or compound, such as amorphous silicon, silicon nitride or silicon oxide.

[0047] Step 2, coating photoresist 14 on the first film 2, such as figure 2 shown.

[0048] Specifically, the photoresist 14 is coated on the surface of the base substrate 1 and the first film 2, the photoresist 14 completely c...

Embodiment 2

[0064] Embodiment 2 provides an array substrate mother board, combined with Image 6 with Figure 7 As shown, the array substrate motherboard includes a second scale pattern 6 , the second scale pattern 6 is disposed on the base substrate 1 , and there is a gap between the edge of the second scale pattern 6 and the edge of the base substrate 1 .

[0065] Specifically, the second scale pattern 6 includes a plurality of second scale lines 61 and a plurality of second scale values ​​62, the second scale lines 61 are arranged at equal intervals along the direction perpendicular to the edge of the base substrate 1, and the second scale values ​​62 and The second scale line 61 corresponds. The distance between adjacent second scale lines 61 is the minimum scale value, preferably, the minimum scale value may be 1-20um.

[0066] In the array substrate motherboard provided by Embodiment 2 of the present invention, after the second film 8 partially covers the second scale pattern 6, a...

Embodiment 3

[0072] Embodiment 3 of the present invention provides a detection method, which is applied to the array substrate motherboard provided in Embodiment 2, such as Figure 8 As shown, the detection method is used to detect the position of the second film 8 formed on the second scale pattern 6 , wherein the second film 8 partially covers the second scale pattern 6 . The method comprises the steps of:

[0073] Step 1, collecting an image of the second scale graphic 6 .

[0074] Specifically, the image of the second scale graphic 6 can be captured by the image acquisition unit 10 , and the image of the second scale graphic 6 can be sent to the image processing unit 11 .

[0075] Preferably, the image acquisition unit 10 includes a transmitting unit and a receiving unit, the transmitting unit is used to transmit an optical signal to the second scale figure 6, and the receiving unit is used to receive the light signal reflected by the second scale figure 6, and the second scale figure...

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Abstract

The invention provides a fabrication method of an array substrate mother board, the array substrate mother board and a detection method. The fabrication method of the array substrate mother board comprises the steps of depositing a first thin film on a substrate, wherein a gap exists between an edge of the first thin film and an edge of the substrate; and coating photoresist on the first thin film, performing exposure and developing so that the photoresist forms a first scale pattern, wherein the first scale pattern is flush with the edge of the substrate and covers the first thin film so that the distance between the edge of the first thin film and the edge of the substrate can be read by the first scale pattern. Compared with a method of manual measurement, the fabrication method has the advantages of relatively high measurement efficiency, time saving and labor saving; moreover, the precision of the first scale pattern formed by a photoetching process is microscale; and compared with existing millimeter-scale graduated scale, the measurement accuracy is relatively high, and the measurement deviation is relatively small.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for preparing an array substrate motherboard [0002] method, array substrate motherboard and detection method. Background technique [0003] The existing array substrate mother board undergoes multiple patterning processes to form array patterns such as gates, source and drain electrodes, thin film transistors and pixel electrodes on the array substrate. Different array patterns require different thin films to be deposited by patterning processes, including depositing metal or metal oxide thin films by PVD (Physical Vapor Deposition, physical vapor deposition) and depositing single crystal by CVD (Chemical Vapor Deposition, chemical vapor deposition) , polycrystalline or compound films. Due to the process limit of PVD equipment and CVD equipment, there is a certain distance between the edge of the film deposited by PVD process or CVD process and the edge of the array...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L21/66
CPCH01L22/12H01L27/1218H01L27/1262G01B11/14G06T7/73G06T2207/30148G03F7/16G03F7/20G03F7/26G06T7/0006H01L21/0274H01L27/1288
Inventor 付方彬郭会斌王守坤韩皓宋勇志
Owner BOE TECH GRP CO LTD
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