Method for thermal annealing and semiconductor device formed by method

Abstract

According to various embodiments, a method may include: disposing a dopant in a semiconductor region; forming a radiation absorption layer including or formed from at least one allotrope of carbon over at least a portion of the semiconductor region; and activating the dopant at least partially by irradiating the radiation absorption layer at least partially with electromagnetic radiation to heat the semiconductor region at least partially.

Description

Technical field [0001] Various embodiments generally relate to methods for thermal annealing and semiconductor devices formed by the methods. Background technique [0002] Generally speaking, semiconductor materials can be processed with semiconductor technology on or in a substrate (also called a wafer or carrier), for example, to manufacture an integrated circuit (also called a chip). During the processing of the semiconductor material, certain processing steps may be applied, such as thinning the substrate, doping the semiconductor material, or forming one or more layers on the substrate. [0003] In order to dope the semiconductor material, dopants may be injected into the semiconductor material. The semiconductor material can be further processed to fully activate the dopant. Dopant activation can provide the desired electron effect from the dopant in the semiconductor material. In order to activate the dopant, heat energy can be transferred to the semiconductor material af...

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Problems solved by technology

This can lead to treatment failures or limit the scope of treatments such as heat treatment

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