Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A semipolar aln template

A semi-polar and template technology, applied in the field of materials science, can solve the problems of restricting the efficiency of AlN-based photoelectric devices, poor AlN crystal quality, high dislocation density, etc., and achieve the effect of easier control of growth conditions, low cost, and wide growth window

Active Publication Date: 2019-04-23
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the size of AlN materials obtained by this method is very limited, which forces researchers to try to epitaxially semipolar AlN materials on non-c-plane heterogeneous substrates such as sapphire and silicon carbide, but this technique is very difficult. Moreover, the crystal quality of AlN is poor and the dislocation density is high, which seriously restricts the efficiency of AlN-based optoelectronic devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A semipolar aln template
  • A semipolar aln template
  • A semipolar aln template

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described below. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0043] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terminology used herein in the description of the present invention is only for the purpose of describing specific embodiments, and is not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
angleaaaaaaaaaa
angleaaaaaaaaaa
angleaaaaaaaaaa
Login to View More

Abstract

The invention discloses a semipolar AlN template, which has a semipolar exposed surface and contains a twin structure. The semi-polar AlN template of the present invention can be directly formed by selecting c-plane sapphire or SiC as a substrate without requiring r-plane sapphire, which can not only reduce stacking faults in the AlN epitaxial layer, but also has low cost, and its preparation process is simple, The growth conditions are easy to control, and there is no risk of secondary pollution during the growth process, so it has high quality.

Description

technical field [0001] The invention particularly relates to a semipolar AlN template, which belongs to the field of material science. Background technique [0002] The forbidden band of AlN and its alloys with hexagonal wurtzite structure covers the ultraviolet spectral range of 200-365nm, which is an ideal material for the preparation of deep ultraviolet optoelectronic devices and high-frequency and high-power devices. However, AlN-based materials are usually grown along the polar axis—c-axis, so that AlN and its alloys have strong spontaneous and piezoelectric polarization in the [0001] direction. This polarization effect will generate a high-intensity built-in electric field in the nitride epitaxial layer, causing the energy band to bend and tilt, so that electrons and holes are separated in space, which greatly reduces the luminous efficiency of AlN-based optoelectronic devices. Therefore, people try to improve the performance of light-emitting devices by reducing the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0392H01L31/18
CPCH01L31/0392H01L31/1856Y02P70/50
Inventor 张纪才刘婷王建峰徐科
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com