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Charge pump and FLAS memory

A charge pump and circuit technology, applied in static memory, read-only memory, information storage, etc., can solve the problem of increasing the area of ​​the charge pump and achieve the effect of reducing the area

Active Publication Date: 2017-09-15
HEFEI HENGSHUO SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] This design method can indeed reduce the boost time of the charge pump, but it also increases the main capacitor value of the charge pump. Since the area of ​​the charge pump is mainly affected by the value of the main capacitor, the increase of the main capacitor value will make the charge pump greatly increased area

Method used

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  • Charge pump and FLAS memory
  • Charge pump and FLAS memory
  • Charge pump and FLAS memory

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Embodiment Construction

[0033] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the specific implementation manners of the present invention will be described below with reference to the accompanying drawings. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention, and those skilled in the art can obtain other accompanying drawings based on these drawings and obtain other implementations.

[0034] In order to make the drawing concise, each drawing only schematically shows the parts related to the present invention, and they do not represent the actual structure of the product. In addition, to make the drawings concise and easy to understand, in some drawings, only one of the components having the same structure or function is schematically shown, or only one of them is marked. Herein, "a" not only means "only one", but also means "more than one".

[0035] Such as f...

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Abstract

The invention discloses a charge pump. The charge pump comprises N stages of voltage boosting circuits, wherein N in the N stages of voltage boosting circuits is an integer greater than 1; each stage of the voltage boosting circuit comprises a main capacitor; and in the output direction of voltage signals in the N stages of voltage boosting circuits, the main capacitance value in the former stage of the voltage boosting circuits is higher than or equal to that in the next stage of the voltage boosting circuits. Based on a condition of an unchanged main capacitive area, the main capacitance value in each stage is re-allocated; according to charge conservation, the charges in the next stage of the main capacitor are transmitted by the main capacitor in the former stage; if the main capacitance value of the former stage is greater than or equal to that of the next stage, the quantity of charges transmitted from the former stage to the next stage is increased, so that the speed of boosting the output voltage of the charge pump to a stable value is improved; when the main capacitance value of the former stage is higher, the more charges can be stored; and meanwhile, the capacitance value in the next stage is lower, however, the quantity of charges obtained by the capacitor in the next stage in one time is still increased.

Description

technical field [0001] The invention relates to the technical field of a power switch, in particular to a charge pump and a FLAS memory. Background technique [0002] A charge pump is a DC / DC converter whose function is to generate a voltage higher than the supply voltage on-chip. Compared with other DC / DC converters, it requires less peripheral devices and has no electromagnetic wave interference, so it can be widely used in the field of memory technology. [0003] In the field of memory, such as FLASH memory, when reading, writing and erasing the FLASH memory, a voltage higher than the power supply voltage is required, and this voltage is provided by the charge pump in the FLASH chip. [0004] Due to the increasing requirements for the reading speed and writing speed of the FLASH memory, how the charge pump outputs the required high voltage in a shorter time is becoming more and more important. Therefore, the boost speed has become a very important indicator of the charg...

Claims

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Application Information

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IPC IPC(8): H02M3/07G11C5/14G11C16/30
CPCG11C5/145G11C16/30H02M3/07
Inventor 李政达欧阳托日任军
Owner HEFEI HENGSHUO SEMICON CO LTD
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