Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor structure

一种半导体、空穴的技术，应用在具有空穴提供层的半导体结构领域，能够解决驱动电压高等问题，达到避免电压升高、增加电子空穴结合、提高电子阻障效能的效果

Active Publication Date: 2017-09-15
NICHIA CORP
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although aluminum indium gallium nitride with high aluminum content can effectively improve the effect of electron barrier, it is accompanied by the problem of high driving voltage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure
  • Semiconductor structure
  • Semiconductor structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0063] Figure 1A A schematic cross-sectional view showing a semiconductor structure according to an embodiment of the present invention. Please refer to Figure 1A , in this embodiment, the semiconductor structure 100 a includes a first-type semiconductor layer 110 , a second-type semiconductor layer 120 , a light-emitting layer 130 and a hole-providing layer 140 . The light emitting layer 130 is disposed between the first type semiconductor layer 110 and the second type semiconductor layer 120 . The hole providing layer 140 is disposed between the light emitting layer 130 and the second-type semiconductor layer 120 , and the hole providing layer 140 includes a first hole providing layer 140 a and a second hole providing layer 140 b. The first hole providing layer 140a is disposed between the light emitting layer 130 and the second hole providing layer 140b, and the general chemical formula of the first hole providing layer 140a is Al x1 In y1 Ga 1-x1-y1 N, where 0≤x1x2 In...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor structure includes a first-type semiconductor layer, a second-type semiconductor layer, a light emitting layer and a hole supply layer. The light emitting layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The hole supply layer is disposed between the light emitting layer and the second-type semiconductor layer, and the hole supply layer includes a first hole supply layer and a second hole supply layer. The first hole supply layer is disposed between the light emitting layer and the second hole supply layer, and a chemical formula of the first hole supply layer is Alx1Iny1Ga1-x1-y1N, wherein 0<=x1<0.4, and 0<=y1<0.4. The second hole supply layer is disposed between the first hole supply layer and the second-type semiconductor layer, a chemical formula of the second hole supply layer is Alx2Iny2Ga1-x2-y2N, wherein 0<=x2<0.4, 0<=y2<0.4, and x1>x2.

Description

technical field [0001] The present invention relates to a semiconductor structure, and in particular to a semiconductor structure with a hole-providing layer. Background technique [0002] In a general light-emitting diode chip, in order to increase the probability of electron-hole combination and improve electron barrier, an aluminum indium gallium nitride (AlInGaN) with high aluminum content is arranged between the light-emitting layer and the P-type semiconductor layer. x In y Ga 1-x-y N) quaternary semiconductor layer, and this semiconductor layer may be added with a high concentration of magnesium or carbon. However, although AlInGaN with high Al content can effectively improve the effect of electron barrier, it is accompanied by the problem of high driving voltage. Contents of the invention [0003] The invention provides a semiconductor structure, which has a hole-providing layer. By adjusting the aluminum content in the hole-providing layer, the electron blockin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/14
CPCH01L33/025H01L33/14H01L33/02H01L33/32H01L33/325
Inventor 林政宏黄政杰黄吉豊
Owner NICHIA CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com