Graphene electrode, patterning preparation method of graphene electrode and array substrate

A graphene electrode and patterning technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of limiting the application of electronic devices, complicated preparation process, and high production cost, achieving low patterning difficulty, simple preparation process, The effect of low production cost

Inactive Publication Date: 2017-08-29
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is that the existing graphene electrode patterning preparation process is complex, difficult and high in production cost, which limits its application in the fields of electronic devices and the like

Method used

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  • Graphene electrode, patterning preparation method of graphene electrode and array substrate
  • Graphene electrode, patterning preparation method of graphene electrode and array substrate
  • Graphene electrode, patterning preparation method of graphene electrode and array substrate

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Embodiment 1

[0048] In order to solve the above-mentioned technical problems existing in the prior art, an embodiment of the present invention provides a patterned preparation method of a graphene electrode.

[0049] figure 1 A schematic diagram of the steps of the patterned preparation method of the graphene electrode according to the embodiment of the present invention is shown. refer to figure 1 The patterned preparation method of the graphene electrode in this embodiment includes the following process steps.

[0050] First, a graphene oxide layer 2 and a photoresist layer 3 are sequentially formed on a substrate 1 . Such as figure 1Process a, process b and process c are shown in the process. Specifically, a uniform layer of graphene oxide is first formed on the substrate 1 on which the graphene electrode needs to be formed. Preferably, the method of forming graphene oxide is a solution suspension method, a spin coating method or a slit coating method. After the graphene oxide laye...

Embodiment 2

[0060] corresponding, figure 2 A schematic diagram of the process flow of exposing and developing the photoresist layer in the patterned preparation method of the graphene electrode according to another embodiment of the present invention is shown. refer to figure 2 , this embodiment differs from Embodiment 1 in that:

[0061] In the process of forming the graphene oxide layer and the photoresist layer, a positive photoresist is used for the photoresist layer 3 formed on the graphene oxide layer by using a slit coating method (Slit method). The non-exposed areas of the positive photoresist can show the image.

[0062] During the exposure process, such as figure 2 As shown in the d' process, the mask tool is arranged in parallel above the positive photoresist layer, and then the ultraviolet light is irradiated on the photoresist layer 3 through the mask tool vertically, so that the photoresist layer 3 is Fully exposed. Preferably, the mask tool is a mask plate 4 with a ...

Embodiment 3

[0069] Correspondingly, the embodiment of the present invention also provides a graphene electrode prepared by using the graphene electrode patterning method of the first embodiment or the second embodiment.

[0070] image 3 A schematic cross-sectional view of a patterned graphene electrode manufactured by using a patterned graphene electrode preparation method according to an embodiment of the present invention is shown.

[0071] refer to image 3 In this embodiment, the graphene electrode is located in the graphene electrode layer. The patterned graphene electrode prepared by the above method has the following advantages: low cost, wide application range, easier processing and utilization, and better conductivity.

[0072] Here, the upper surface of the layer where the graphene electrodes are located is parallel to the upper surface of the substrate 1 . Apply the patterned graphene electrode of the present embodiment, because the upper surface of graphene electrode layer...

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Abstract

The invention discloses a graphene electrode, a patterning preparation method of the graphene electrode and an array substrate. In the patterning preparation method of the graphene electrode, firstly, oxidized graphene and photoresist are sequentially formed on a substrate; secondly, development is carried out on the photoresist by ultraviolet light through a mask; thirdly, exposed photoresist is developed by utilizing developing solution; then the corresponding exposed oxidized graphene is reduced; and finally, the residual photoresist is stripped off to obtain the patterned graphene electrode. The graphene electrode is a graphene electrode prepared by utilizing the graphene electrode patterning preparation method. The array substrate is prepared by using the graphene electrode prepared by the method as an electrode material. The method disclosed by the invention is simple in technical process, low in difficulty in patterning preparation and low in cost, and meanwhile, reduction of quality of the graphene electrode in the preparing process can also be avoided.

Description

technical field [0001] The present invention relates to the technical field of electrode preparation, in particular to a patterned preparation method for graphene electrodes, and also to a graphene electrode prepared by the preparation method, and an array substrate with the graphene electrode. Background technique [0002] Graphene is a monoatomic layer material composed of carbon atoms, and is currently the thinnest material in the world (the thickness of a single layer is 0.335nm). Graphene has ultra-high electron mobility (up to 15000cm 2 / V s), excellent mechanical properties, high rigidity, high light transmittance (up to 97.7%) and ultra-high thermal conductivity (up to 5000W / mK, greater than that of copper 100 times). In addition, graphene also has a high specific surface area and good flexibility. Because graphene has the above multiple advantages, it has been widely used in the industrial field in recent years. Especially in the semiconductor industry and optoe...

Claims

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Application Information

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IPC IPC(8): H01L21/77H01L27/12
Inventor 王海军
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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