A Floating HP Memristor Equivalent Circuit with Bipolar Characteristics

Abstract

The invention discloses a floating ground type HP resistance memory equivalent circuit with bipolar characteristic. The floating ground type HP resistance memory equivalent circuit comprises an operational amplifier U1, current conveyors U2 and U3, a multiplier U4, resistors R1 and R2 and a capacitor C1, wherein the resistor R1, the capacitor C1 and the current conveyor U2 are connected to form an integral circuit; the positive input terminal of the operational amplifier U1 is connected with an input signal, and the output terminal is connected with the negative input terminal to perform voltage following; the multiplier U4 realizes signal multiplication; and the current conveyor U3 is connected with the resistor R2 and the output of the multiplier, so that mirroring of an output current and an input current is realized. The floating ground type HP resistance memory equivalent circuit disclosed by the invention has the advantages that an analog circuit is utilized for realizing volt-ampere characteristics of HP TiO2 resistance memory, the structure is simple, and transformation between increment resistance memory and decrement resistance memory can be realized by changing input port connection of the multiplier, thereby being more coincident with the HP resistance memory characteristic.

Description

technical field [0001] The invention relates to an HP memristor equivalent circuit, in particular to the design of a floating type memristor equivalent circuit with bipolar characteristics. Background technique [0002] Memristor is the basic component of circuit that describes the relationship between charge and magnetic flux. In 1971, Cai Shaotang theoretically predicted the existence of memristor elements. In 2008, Hewlett-Packard Laboratory Stekov et al. reported the realization of memristors for the first time in "Nature". Memristor is a non-linear resistor with memory function, which can memorize the amount of charge flowing through it, and its resistance value can be changed by controlling the change of current, and this change can be restored when the power is turned off. Continue to maintain, which makes memristor a natural non-volatile memory, and its memory characteristics will have an extremely profound impact on computer science, bioengineering, neural networks...

AI Technical Summary

Problems solved by technology

[0003] However, HP TiO 2 The nanotechnology used by memristor has the defects of difficulty in implementation and high cost. Memristor has not yet entered the market as an actual component. Therefore, a memristor equivalent circuit is designed and used to replace the actual memristor for experiments and applications. research matters

[0004] Although a small number of memristor equivalent circuits have been reported, the structures are relatively complex, and most of them are grounded, and the error with the HP memristor model is relatively large, and the equivalent circuit can only be used for the HP memristor. Increment or decrement of a characteristic is equivalent, it is difficult to accurately simulate the characteristics of the actual memristor, making the application of the equivalent circuit flawed

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