AlInGaN-based green and yellow light-emitting diode epitaxial structure
A technology of light-emitting diodes and epitaxial structures, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of V-pit 4 to enhance hole injection, etc., and achieve the effect of enhancing hole injection function and improving luminous efficiency
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Embodiment 1
[0036] This embodiment introduces the epitaxial structure in which the starting position of the V-pit is the substrate.
[0037] refer to Figure 5 . In the figure, 1 is the substrate, and the "process V-pit" 4 is periodically arranged on the substrate 1, and the schematic diagram of the projection of the "process V-pit" 4 on the upper surface of the substrate 1 is as follows Figure 4 shown. The buffer layer 2 is grown on the substrate 1. Due to the existence of the "process V pit" 4 on the substrate 1, a semipolar buffer layer 2 will also grow on the sidewall of the "process V pit" 4; moreover, the buffer layer 2 The growth rate on the semipolar face is less than that on the polar face. Therefore, a "process V-pit" 4 is also formed in the buffer layer 2, the size of which is larger than that of the "process V-pit" 4 in the substrate 1, and the periodic arrangement of the "process V-pit" 4 of the substrate 1 is inherited. . Similarly, growing the N-type AlInGaN layer 3 o...
Embodiment 2
[0039] Compared with Example 1, the substrate 1 is changed to have no "process V-pit" 4 structure, that is, the "process V-pit" 4 starts in the buffer layer 2; the epitaxial structure refers to Figure 6 . In this epitaxial structure, the "process V-pit" 4 needs to be introduced after the buffer layer 2 is grown. Therefore, the entire epitaxial structure needs to be completed by means of secondary epitaxy.
Embodiment 3
[0041] Compared with Example 2, the buffer layer 2 is changed to have no "process V-pit" 4 structure, that is, the "process V-pit" 4 starts in the N-type AlInGaN layer 3; the epitaxial structure refers to Figure 7 . The epitaxial structure needs to grow the N-type AlInGaN layer 3 before introducing the "process V-pit" 4, so a secondary epitaxial method is required to complete the entire epitaxial structure.
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