Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of method for preparing electronic grade dichlorodihydrogen silicon

A technology of dichlorodihydrosilane and electronic grade, which is applied in chemical instruments and methods, halosilanes, silicon compounds, etc., and can solve problems such as unstable product quality and high energy consumption

Active Publication Date: 2020-02-11
CHINA SILICON CORP LTD +1
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims to provide a method for preparing electronic-grade dichlorodihydrogen silicon to solve the technical problems of high energy consumption and unstable product quality in the prior art for preparing electronic-grade dichlorodihydrogen silicon

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of method for preparing electronic grade dichlorodihydrogen silicon
  • A kind of method for preparing electronic grade dichlorodihydrogen silicon
  • A kind of method for preparing electronic grade dichlorodihydrogen silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] use figure 1 The process shown, using figure 2 The device shown, the specific test parameters are listed in Table 1.

[0031] Table 1

[0032]

[0033] Under the above conditions, the purity of the product dichlorodihydrogen silicon reaches 9N, the B impurity content is 0.06ppb, the P impurity content is 0.08ppb, and the Al impurity content is 0.06ppb.

Embodiment 2

[0035] use figure 1 The process shown, using figure 2 The device shown, the specific test parameters are shown in Table 2.

[0036] Table 2

[0037]

[0038] Under the above conditions, the purity of the product dichlorodihydrosilane reaches 9N, the B impurity content is 0.02ppb, the P impurity content is 0.04ppb and the Al impurity is 0.04ppb.

Embodiment 3

[0040] use figure 1 The process shown, using figure 2 The device shown, the specific test parameters are shown in Table 3.

[0041] table 3

[0042]

[0043] Under the above conditions, the purity of the product dichlorodihydrosilane reaches 9N, the B impurity content is 0.01ppb, the P impurity content is 0.03ppb and the Al impurity is 0.03ppb.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing electron-level dichlorosilane. The method comprises the following steps of S1, enabling aromatic aldehyde or derivative of aromatic aldehyde and raw material of dichlorosilane to react, so as to obtain a reaction product; S2, removing one part of heavy component from the reaction product, and then removing a light component and the remained heavy component, so as to obtain a purifying product; S3, sending the purifying product into an adsorbing and purifying unit, and removing impurities, so as to obtain the electron-level dichlorosilane. By adopting the technical scheme, the method has the advantages that the process is greatly shortened by the technology, the equipment investment is reduced, the energy consumption in running is decreased, and the product quality can reach the electron level.

Description

technical field [0001] The invention relates to the field of chemical industry, in particular to a method for preparing electronic-grade dichlorodihydrogen silicon. Background technique [0002] Electronic grade dichlorodihydrosilicon belongs to silicon source electron special gas, mainly used as silicon source gas for silicon epitaxial wafers, it is currently mainly used for orientation epitaxy of crystalline silicon, silicon nitride preparation and polycrystalline silicon in large-scale integrated circuits preparation. At present, the electronic information industry is developing rapidly. Dichlorodihydrosilane electronic gas is used as a raw material, and its market demand continues to grow. Rely on overseas markets. [0003] The market demand for dichlorodihydrogen silicon electronic gas continues to grow, but there is basically no production of electronic-grade dichlorodihydrosilane in my country, and all rely on overseas markets. At present, the production of high-pu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/107
CPCC01B33/1071C01B33/10778
Inventor 刘见华赵雄万烨郭树虎姜利霞王芳杨永亮杜俊平汤传斌严大洲
Owner CHINA SILICON CORP LTD
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com