CMOS (Complementary Metal Oxide Semiconductor) image sensor

Abstract

Disclosed are a CMOS (Complementary Metal Oxide Semiconductor) image sensor as well as a camera and a digital camera using the same. The sensor comprises a pixel signal generating module for generating pixel signals of different modes based on a time series control signal, a pixel signal acquisition module for acquiring and storing the pixel signals of different modes in an assembly line manner and performing correlated double sampling on the pixel signals of different modes, and a pixel signal processing module for performing multi-column sharing on the pixel signals of the correlated double sampling to obtain digital codes. The pixel signal generating module can obtain pixel signals of different modes by adjusting the time series control signal of a pixel signal controller, so the resolution and frame rate of the CMOS sensor are adjustable. The pixel signal sampling module and the pixel signal processing module can process the pixel signals in a multi-column sharing manner, so the circuit structure can process multiple columns of pixel signals compactly at a high speed, reduce the chip area, effectively reduce the area of an analog readout circuit and realize the layout more easily.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and more specifically relates to a CMOS image sensor. Background technique [0002] There is a compromise between the imaging frame rate and imaging resolution of a CMOS (Complementary Metal Oxide Semiconductor) image sensor. Usually, once a CMOS image sensor is produced, its highest imaging frame rate and maximum resolution are determined and cannot be adjusted. In addition, high-speed CMOS image sensors mostly adopt a column-parallel readout structure, each column is equipped with a readout circuit, so the area of ​​the readout circuit is relatively large, and at the same time, the layout of the column readout circuit is implemented in a narrow strip space (usually micron level). bring difficulty. Contents of the invention [0003] Based on the above problems, the main purpose of the present invention is to provide a CMOS image sensor for solving at least one of the above technic...

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Problems solved by technology

[0002] There is a compromise between the imaging frame rate and imaging resolution of CMOS (Complementary Metal Oxide Semiconductor) image sensors. Usually, once a CMOS image sensor is produced, the highest imaging frame rate and maximum resolution are determined and cannot be adjusted.

In addition, high-speed CMOS image sensors mostly adopt a column-parallel readout structure, each column is equipped with a readout circuit, so the area of ​​the readout circuit is relatively large, and at the same time, the layout of the column readout circuit is implemented in a narrow strip space (usually micron level). bring difficulties

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