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Cuprous Ion Complexes with Thermally Activated Delayed Fluorescence and Their Preparation and Application

A thermal activation delay, cuprous ion technology, applied in copper organic compounds, 1/11 group organic compounds without C-metal bonds, chemical instruments and methods, etc., can solve the problems of poor stability, instability, purification Difficulties and other problems, to achieve the effect of simple preparation process, high efficiency and rich source of ligands

Active Publication Date: 2019-03-15
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention proposes a cuprous ion complex with thermally activated delayed fluorescence and its preparation and application, which solves the difficulties in the preparation and purification of copper metal complexes in the prior art and the instability in the process, and at the same time, it can be used in evaporation Technical problems with poor stability in the process

Method used

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  • Cuprous Ion Complexes with Thermally Activated Delayed Fluorescence and Their Preparation and Application
  • Cuprous Ion Complexes with Thermally Activated Delayed Fluorescence and Their Preparation and Application
  • Cuprous Ion Complexes with Thermally Activated Delayed Fluorescence and Their Preparation and Application

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Embodiment 1

[0037] After the glass substrate 101 with ITO transparent electrode is ultrasonically cleaned in acetone and isopropanol for 5 minutes, a hole injection layer (HIL) 103 of 5-20 nm is vacuum deposited on the ITO102, and then 5- 40 nm hole transport layer (HTL) 104, and then 5-20 nm electron blocking layer (EBL) 105, and then co-evaporate the above-mentioned organic ligand L with the copper source to form CuX: L weight percentage is 1 -12%, a light-emitting layer (EML) 106 with a thickness of 5-40 nanometers, and a hole blocking layer (HBL) 107 with a thickness of 5-20 nanometers and an electron transport layer (ETL) 108 with a thickness of 5 -60 nm, the electron injection layer (EIL) is 0.5-30 nm, and the electrode 109 is 20-100 nm thick, forming an organic electroluminescent diode element.

[0038] The device structure of the embodiment is as follows:

[0039]

[0040] The device performance parameters of the embodiment are as follows:

[0041] Device

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Abstract

The present invention proposes a cuprous ion complex with thermally activated delayed fluorescence and its preparation and application. The general structural formula of the complex is (CuX) m L n , wherein X is Cl, Br, I or CN, L is a nitrogen-containing organic compound, m is 1-4, and n is 1-4. The preparation includes: vacuum co-evaporation, solution spin coating, solution printing or blending and milling of CuX as a cuprous source and organic ligand L to obtain the cuprous ion complex described in claim 1 or 2. Applied to electroluminescent elements. The cuprous ion complex with heat-activated delayed fluorescence in the present invention has the advantages of abundant sources of ligands and high efficiency. The preparation process is simple and suitable for industrial promotion and application.

Description

Technical field [0001] The invention relates to the field of organic electroluminescent materials, in particular to a cuprous ion complex with thermally activated delayed fluorescence and its preparation and application. Background technique [0002] Since Deng Qingyun and others first reported organic light-emitting diodes (OLEDs) in 1987, they have the advantages of low-voltage drive, high efficiency, active light emission, fast response, rich colors, and flexibility. It has become one of the mainstream technologies for the next generation of flat panel displays. Although green and red phosphorescent materials based on rare metal iridium complexes have met industrial applications and have been widely used in commercial OLED display devices, the content of metallic iridium in the earth's crust is very limited. It is estimated that if this type of OLED is applied to all display and lighting equipment in the world in the future, the iridium metal in the earth's crust will be exha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C07F1/08C09K11/06H01L51/54
CPCC09K11/06C07F1/005C09K2211/188H10K85/371
Inventor 王子兴陈安平祝俊
Owner SHANGHAI UNIV
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