Electron irradiation preparation method of aluminum oxide quantum dots on a film surface

An electron irradiation, alumina technology, applied in ion implantation plating, metal material coating process, vacuum evaporation plating, etc. Small sample size, etc., to achieve the effect of good uniformity of morphological distribution, uniform size and good circularity

Inactive Publication Date: 2019-06-11
SICHUAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the electron beam irradiation devices used in these processes are all transmission electron microscopes (referred to as transmission electron microscopes), and their main disadvantages are that the size of the prepared quantum dot samples is small, usually on the order of nanometers to micrometers, and the prepared quantum dots are mainly Suitable for scientific research, difficult for large-scale commercial application
At the same time, the electron beam intensity of the transmission electron microscope is limited, and the preparation efficiency is low
In particular, there are few reports on the preparation of quantum dots by electron irradiation in electron electrostatic accelerators that are more suitable for industrial production.
Furthermore, there is no technology and research on the preparation of alumina quantum dots by electron irradiation based on electron electrostatic accelerators in the scientific and engineering circles.

Method used

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  • Electron irradiation preparation method of aluminum oxide quantum dots on a film surface
  • Electron irradiation preparation method of aluminum oxide quantum dots on a film surface

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Embodiment 1

[0033] In this embodiment 1, the electron irradiation preparation method of the aluminum oxide quantum dots on the surface of a film is prepared sequentially according to the aforementioned process steps; the electron irradiation of the accelerator adopts a commercial electron electrostatic accelerator, a commercial electron electrostatic accelerator The model is JJ-2MV; the magnetron sputtering coating machine used is QX-500 magnetron sputtering coating machine; the heating furnace used is a box-type heating furnace, and the substrate is a single crystal silicon wafer.

[0034] A method for preparing electron irradiation of aluminum oxide quantum dots on the surface of the film described in Example 1, specifically adopts the following process steps in sequence:

[0035] Step (1), cleaning of the substrate

[0036] Firstly, the surface-polished single-crystal silicon wafers are sequentially cleaned with analytically pure nitric acid, acetone, absolute ethanol and deionized water...

Embodiment 2

[0046] The preparation method, process steps and electron irradiation apparatus used in this embodiment 2 are the same as in embodiment 1, wherein the process parameters are different, and the substrate is a glass sheet; specifically, the following process steps are adopted successively:

[0047] Step (1), cleaning of the substrate

[0048] Firstly, the surface-polished glass sheet is sequentially cleaned with analytically pure nitric acid, acetone, absolute ethanol and deionized water in an ultrasonic tank for impurity removal, oil removal and decontamination for 20 minutes, and then dried in an oven; Subsequently, the glass sheet was put into a QX-500 magnetron sputtering coating machine for plasma backsputter cleaning. The backsplash cleaning process parameters were: the background vacuum degree was 5×10 -5 Pa, the backsplash cleaning bias is -500V, Ar gas with a purity of 99.95% is used as the working gas, the backsplash pressure is 5.0Pa, and the cleaning time is 30 minut...

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Abstract

The invention relates to an electron irradiation preparation method of aluminum oxide quantum dots on the surface of a thin film. The method comprises cleaning of the substrate; preparation of the aluminum oxide amorphous film; electron irradiation of the prepared amorphous film by a commercial electron electrostatic accelerator; and annealing treatment of the irradiated amorphous film. Through the above steps, alumina quantum dots are prepared on the surface of the alumina amorphous film, and the quantum dot distribution density and geometric structure characteristic parameters can be regulated by controlling electron irradiation and annealing treatment parameters. Compared with the prior art, the present invention grows alumina quantum dots in situ on the surface of the alumina film without introducing impurities, and the process is simple; the obtained alumina film is amorphous, so the circularity of the alumina quantum dots prepared by the present invention is Better, uniform in size, and uniform in shape distribution. Moreover, commercial electron electrostatic accelerators are used for electron irradiation, which can realize large-scale large-scale preparation and commercial application.

Description

technical field [0001] The invention belongs to the technical field of quantum dot preparation, and in particular relates to an electron irradiation preparation method of aluminum oxide quantum dots on the surface of a thin film. Background technique [0002] Alumina quantum dots are extremely small alumina particles formed by a quasi-zero-dimensional nanostructure and closed electrons. Its radius is smaller than or close to that of bulk materials, and its size is usually between 1nm and 100nm. Due to the small size structure of alumina quantum dots, the quasi-continuous energy band evolves into a discrete energy level structure, which has very different properties from bulk materials, including small size effects, quantum size effects, macroscopic quantum tunneling effects, and electronic confinement. Effect and unique surface effect, etc.; therefore, it exhibits a series of novel physical and chemical properties. At present, the preparation methods of alumina quantum dots...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/58C23C14/08C23C14/34
CPCC23C14/0036C23C14/081C23C14/5813
Inventor 杨吉军苗发明廖家莉杨远友刘宁
Owner SICHUAN UNIV
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