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ZnO voltage-sensitive ceramic doped with a Y<3+>-Ga<3+> composite donor and a preparing method thereof

A varistor ceramic and donor doping technology, applied in the direction of varistor, varistor core, etc., can solve the aging life of ZnO varistor, the decrease of pulse current tolerance performance index, can not meet the industrial application, ZnO Lattice distortion and other problems, to achieve the effect of enhancing aging life, suppressing the decline of nonlinear coefficient, and suppressing the growth of leakage current

Active Publication Date: 2017-06-30
贵阳高新益舸电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the ion radius of Al is only 0.0535nm, and the ion radius of Zn is 0.074nm, the difference between the ion radii of the two is relatively large, and the formation of donor doping will lead to serious distortion of the ZnO lattice, which will inevitably lead to the aging life of ZnO varistors, pulse Performance indicators such as current tolerance have dropped significantly, which can no longer meet the needs of industrial applications

Method used

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  • ZnO voltage-sensitive ceramic doped with a Y&lt;3+&gt;-Ga&lt;3+&gt; composite donor and a preparing method thereof

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Embodiment 1

[0026] Embodiment 1: a kind of Y 3+ , Ga 3+ The ZnO varistor ceramic prepared by compound donor doping includes a base material and a dopant, and the base material includes ZnO: 90.5 parts, Bi 2 o 3 : 3.0 parts, MnO 2 : 0.5 parts, Sb 2 o 3 : 2.5 parts, Co 2 o 3 : 1 part, Cr 2 o 3 : 0.5 parts, 2 parts of seed crystal dopant material, the mass fraction ratio of said seed crystal dopant material is ZnO: Ga(NO 3 ) 3 :Y(NO 3 ) 3 =94:3:3.

Embodiment 2

[0027] Embodiment 2: a kind of Y 3+ , Ga 3+ The ZnO varistor ceramic prepared by compound donor doping includes a base material and a dopant, and the base material includes ZnO: 87 parts, Bi 2 o 3 : 2.0 parts, MnO 2 : 0.4 parts, Sb 2 o 3 : 1.5 parts, Co 2 o 3 : 0.5 parts, Cr 2 o 3 : 0.2 part, seed dopant: 1 part; the seed dopant is ZnO, Ga 2 o 3 and Y 2 o 3 , whose mass fraction ratio is ZnO:Ga 2 o 3 : Y 2 o 3 =90:0.1:0.1.

Embodiment 3

[0028] Embodiment 3: a kind of Y 3+ , Ga 3+ The ZnO varistor ceramic prepared by compound donor doping includes a base material and a dopant material, and the base material includes ZnO: 95 parts, Bi 2 o 3 : 4.0 parts, MnO 2 : 0.7 parts, Sb 2 o 3 : 3.5 parts, Co 2 o 3 : 1.5 parts, Cr 2 o 3 : 1.0 parts, seed dopant: 5 parts; the seed dopant is ZnO, Ga 2 o 3 and Y 2 o 3 , whose mass fraction ratio is ZnO:Ga 2 o 3 : Y 2 o 3 =95:5:5.

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Abstract

ZnO voltage-sensitive ceramic doped with a Y<3+>-Ga<3+> composite donor and a preparing method thereof are disclosed. The voltage-sensitive ceramic includes a base material and a doping material. The base material includes, by weight, 87-95 parts of ZnO, 2.0-4.0 parts of Bi<2>O3, 0.4-0.7 part of MnO2, 1.5-3.5 parts of Sb<2>O3, 0.5-1.5 parts of Co<2>O3, 0.2-1.0 part of Cr<2>O3, and 1-5 parts of a seed crystal doping material. The seed crystal doping material includes ZnO, Ga2O3 and Y2O3 in a mass ratio of 90-95:0.1-5:0.1-5. According to the voltage-sensitive ceramic, ZnO crystal grain resistivity can be reduced, ZnO lattice distortion can be controlled, and characteristics including a low residual voltage, long ageing life and high pulse current tolerance of a ZnO voltage dependent resistor are finally achieved.

Description

technical field [0001] The invention relates to a ZnO varistor ceramic and a preparation method thereof, in particular to an Al-free 3+ Doped Y 3+ , Ga 3+ Composite donor-doped ZnO varistor ceramics and a preparation method thereof. Background technique [0002] ZnO varistor is made of ZnO as the main raw material, adding a small amount of Bi 2 o 3 、Co 3 o 4 , MnO 2 , Sb 2 o 3 、Cr 2 o 3 And other raw materials, prepared by ceramic sintering process. The varistor has the advantages of good nonlinearity and large flow capacity, and it has been widely used as a lightning surge protection component in electronic circuits and power systems. With the rapid development of microelectronic information technology, the requirements for miniaturization, integration and modularization of components are becoming more and more urgent. Miniaturized electronic components have high sensitivity and low overvoltage resistance level, which increases the demand for lightning protecti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/626C04B35/634C04B35/638H01C7/112
CPCC04B35/453C04B35/62605C04B35/63416C04B35/638C04B2235/3225C04B2235/3241C04B2235/3267C04B2235/3275C04B2235/3284C04B2235/3286C04B2235/3294C04B2235/3298C04B2235/6567H01C7/112
Inventor 庞驰张宁方超周芳
Owner 贵阳高新益舸电子有限公司
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