Rare earth doped SnTe-based thermoelectric material

Abstract

The invention discloses a rare earth doped SnTe-based thermoelectric material. The SnTe-based thermoelectric material is doped with rare earth elements which have an atomic percentage of 0.1 to 2%. Compared with the existing SnTe-based thermoelectric material, the rare earth doped SnTe-based thermoelectric material in the technical scheme of the invention has better thermoelectric properties, with appropriate conductivity and high thermoelectric properties; and when added, the rare earth elements easily replace the Sn position as a donor to reduce the intrinsic Sn hole concentration, the carrier concentration is optimized, and the thermoelectric properties of the material are thus improved.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric materials, in particular to a rare earth-doped SnTe-based thermoelectric material. Background technique [0002] The material of a thermoelectric generator or thermoelectric cooler is called a thermoelectric material, which is a material that can realize the interactive transformation of electrical energy and thermal energy. Thermoelectric power generation and refrigeration devices made of thermoelectric materials have the advantages of no pollution, no noise, easy maintenance, safety and reliability. The earliest Soviets used kerosene lamps or wood as a heat source to power domestic radio receivers in remote areas. With increasing interest in space exploration, and increasing resource exploration and exploration activities on Earth, there is a need to develop a class of power systems that can supply their own energy and leave it alone. Thermoelectric power generation is particularly suita...

AI Technical Summary

Problems solved by technology

However, undoped SnTe-based materials have higher intrinsic Sn vacancies, which cause higher intrinsic carrier concentrations, making the material have higher thermal conductivity and lower Seeebeck coefficient and Z value.

Although the use of In doping can improve the Seebeck coefficient of the material by introducing resonance energy levels, this method has high requirements for dopants, and the performance improvement range is limited. The introduction of resonance energy levels will reduce the carrier mobility.

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