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Cleaning method of metal nanowire

A technology of metal nanowires and protective layers, applied in the field of nanomaterials, can solve the problems of time-consuming, low efficiency, cumbersome operation, etc., and achieve the effect of overcoming time-consuming, avoiding precipitation, and efficient cleaning

Active Publication Date: 2017-06-20
山东利特纳米技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This process overcomes the shortcomings of long time-consuming centrifugal washing, cumbersome operation and low efficiency, and at the same time avoids the phenomenon of film formation in the process of filtration and washing

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] 1. Metal nanowire slurry 5mg / ml 100ml is mixed with 100ml of absolute ethanol, and 50mg of tetrabutyl titanate is added. After mixing, 250mg of deionized water is added, and a protective layer of titanium dioxide is formed on the surface of the metal nanowire.

[0028] 2. Wash the metal nanowires containing the titanium dioxide protective layer by suction filtration, wash the filter cake with deionized water to obtain the cleaned product; redisperse the cleaned product in 100 ml of 0.1 mg / ml polyvinylpyrrolidone aqueous solution, and mix well.

[0029] 3. Add 0.5 g of NaOH to the mixed solution obtained in the above step 2, mix evenly, leave it to stand and pour off the supernatant to obtain the washed metal nanowires.

Embodiment example 2

[0031] 1. Metal nanowire slurry 5mg / ml 100ml mixed with 100ml isopropanol evenly, add 50mg tetrabutyl titanate, mix well, add 250mg deionized water, a layer of silicon dioxide protective layer is formed on the surface of metal nanowires.

[0032]2. Wash the metal nanowires containing the silicon dioxide protective layer by suction filtration, wash the filter cake with deionized water to obtain the cleaned product; redisperse the cleaned product in 100 ml of 0.1 mg / ml polyvinylpyrrolidone aqueous solution, and mix well.

[0033] 3. Add 0.5 g of NaOH to the mixed solution obtained in the above step 2, mix evenly, leave it to stand and pour off the supernatant to obtain the washed metal nanowires.

Embodiment example 3

[0035] 1. Mix 5mg / ml 100ml of metal nanowire slurry with 100ml deionized water, add 50mg of magnesium nitrate, mix well and add 250mg of sodium hydroxide to form a protective layer of magnesium hydroxide on the surface of the metal nanowire.

[0036] 2. Wash the metal nanowires containing the protective layer of magnesium hydroxide by suction filtration, wash the filter cake with deionized water to obtain the cleaned product; redisperse the cleaned product in 100 ml of 0.1 mg / ml polyvinylpyrrolidone aqueous solution, and mix well.

[0037] 3. Add 0.5 g of hydrochloric acid to the mixed solution obtained in the above step 2, after mixing evenly, leave it to stand and pour off the supernatant to obtain the washed metal nanowires.

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PUM

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Abstract

The invention discloses a cleaning method of a metal nanowire. The cleaning method comprises the coating procedure, cleaning procedure, dispersion procedure and removing procedure. The cleaning method of the metal nanowire is characterized in that a protective layer is formed on the surface of the metal nanowire, coagulation of the metal nanowire is effectively prevented through the protective layer during follow-up suction filtration washing, a solvent, organic polymers and inorganic salt are removed through suction filtration washing, and finally, the protective layer on the surface of the metal nanowire is removed. The cleaning method has the beneficial effects that the quick and efficient cleaning technology of the metal nanowire overcomes the defects that centrifugal washing time is long, operation is complex and efficiency is low, coagulation of the metal nanowire is effectively prevented through the protective layer during follow-up suction filtration washing, the metal nanowire is quickly and efficiently cleaned, the film forming phenomenon during the filtration washing process is effectively avoided, yield of a product is increased, and quality of the product is improved.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and more specifically relates to a method for cleaning metal nanowires. Background technique [0002] Indium tin oxide (ITO) is currently the most widely cited transparent electrode material, which is mainly used in related technologies such as display screens and touch screens. However, ITO is brittle and has high cost, so it has become a trend to develop alternative materials for ITO. Studies have shown that metal (such as silver, copper, etc.) nanowires not only have good electrical conductivity, but also have unique optical and electrical properties due to their small size effect, quantum effect, and high specific surface effect. It is used in transparent conductive electrodes, flexible display screens, surface-enhanced Raman technology, functional nano-devices and other fields. [0003] At present, metal nanowires are mostly prepared by a wet method, and contain a large amount ...

Claims

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Application Information

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IPC IPC(8): B22F1/00C23G5/032C23G5/036C23G5/024B08B3/04
CPCC23G5/024C23G5/032C23G5/036B08B3/04B22F1/14
Inventor 岳鲁敏郑逸群禹益善苏阳
Owner 山东利特纳米技术有限公司
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