A finishing and de-crucing process for growing large-sized crystals by the Kyropoulos method and its application

Abstract

An ending crucible separating process for large-size crystals grew in a kyropoulus method growth and applications of the process are disclosed and belong to the technical field of crystal growth and preparation. The process is a process of reducing the bottom crucible adhesion degree in an ending period in the later stage of constant-diameter crystal growth, and separating the crystals from a crucible after growth of the crystals is determined to be finished. The process is advantageous in that the crucible separating success rate can be 80% or above; large-area crucible bottom adhesion in the later state of crystal growth can be effectively overcome; the crystals are separated from the wall of the crucible and are in a suspended state; crystal diameter uniformity is good; crystal thermal stress is obviously reduced or eliminated; the possibility of crystal cracking is greatly reduced; the rate of finished products and the yield of crystals are increased; and the growth period is effectively shortened, thus facilitating reduction of the production.

Description

technical field [0001] The invention belongs to the technical field of crystal growth and preparation, and in particular relates to a final crucible-removing process for growing large-size crystals by the Kyropoulos method and its application. Background technique [0002] In recent years, with the rapid development of infrared technology, microelectronics technology and optoelectronics technology, sapphire crystal (α-Al 2 o 3 Single crystal) with its unique lattice structure, stable physical and chemical properties, excellent optical, thermal, and mechanical properties, can work under harsh conditions close to 2000 °C, and has gradually become the mainstream lining of the new generation of semiconductor light-emitting diodes (LEDs). Bottom material, important infrared window material and the panel and lens of the current smart phone, the preferred material for the mirror of the smart watch. At the same time, the explosive growth of market demand has also driven the rapid ...

AI Technical Summary

Problems solved by technology

However, due to the characteristics of the Kyropoulos crystal growth, the protruding shape of the solid-liquid interface and the large temperature gradient at the bottom of the crucible, the growth rate in the later stage of crystal growth is too fast and difficult to control. (Crystal sticking to the crucible wall) phenomenon, resulting in large-scale sapphire grown by the Kyropoulos method, has a large thermal stress, which is easy to cause cracking, greatly reduces the yield and yield of the crystal, and prolongs the growth cycle and increases production costs.