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Process for fabricating vertically-assigned gallium arsenide semiconductor nanowire array of large area

A nanowire array, manufacturing method technology, applied in semiconductor/solid-state device manufacturing, nanostructure manufacturing, semiconductor device and other directions, can solve the problem of difficult to manufacture high aspect ratio nanowires, difficult to manufacture with uniform diameter and length. problems with nanowires

Active Publication Date: 2017-05-31
KOREA RES INST OF STANDARDS & SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, for III-V semiconductor substrates containing GaAs, when metal is used as a catalyst for chemical etching, side etching occurs simultaneously with vertical etching, so it is difficult to manufacture nanowires with uniform diameters and lengths, It is also difficult to fabricate nanowires with high aspect ratios

Method used

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  • Process for fabricating vertically-assigned gallium arsenide semiconductor nanowire array of large area
  • Process for fabricating vertically-assigned gallium arsenide semiconductor nanowire array of large area
  • Process for fabricating vertically-assigned gallium arsenide semiconductor nanowire array of large area

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0101] 【Example 1】 Figure 9 A method for the generation of vertical nanowires.

[0102] Pretreatment of GaAs substrate

[0103] The gallium arsenide n-type (100) substrate, n-type (111) substrate and p-type (100) substrate of iNexus Company were cleaned and dried with acetone, ethanol and deionized water in order to remove the contamination existing on the substrate surface objects, and then use oxygen plasma (oxygen: 100sccm, plasma power: 300W, time: 20 minutes) to increase the surface humidity.

[0104] Fabrication of Monolayer Arrays of Polystyrene Nanoparticles

[0105] The polystyrene nanoparticles (average particle diameter 250nm) of Microparticles company and propanol (C 3 h 7 OH) after mixing, use a syringe pump to inject on the surface of the deionized water contained in the beaker, so that the monolayer array of polystyrene nanoparticles with a hexagonal close-packed structure is uniformly formed on the surface of the deionized water, and then After the pretre...

Embodiment 2

[0110] [Example 2] Figure 10 The method for the generation of vertical nanowires

[0111] Except that the n-type (100) GaAs substrate in the first embodiment is changed to an n-type (111) GaAs substrate, the others are the same as the above-mentioned first embodiment.

Embodiment 3

[0112] [Example 3] Figure 11 The method for the generation of vertical nanowires

[0113] Except that the n-type (100) GaAs substrate in the embodiment 1 is changed to a p-type (100) GaAs substrate, the others are the same as the above-mentioned embodiment 1.

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Abstract

The present invention relates to a method for manufacturing a GaAs semiconductor nanowire in a bottom-up type and, more particularly, to a method for manufacturing a vertically-aligned gallium arsenide semiconductor nanowire array in a large area by applying a voltage and a current from the outside using a metal thin film, which has been made through an economical method of fabricating a mesh-type metal thin film in a large area, as an anode such that holes (h+) are injected into a gallium arsenide substrate, thereby inducing a wet etching process continuously. The obtained vertically-aligned gallium arsenide semiconductor nanowire of a large area can be applied to fabrication of nanoelements, such as a solar cell, a transistor, and a light-emitting diode. According to the present invention, the diameter of the gallium arsenide semiconductor nanowire can be adjusted through control of the mesh size of the metal thin film, and the length of the nanowire is not only freely adjusted through control of the etching time, the applied voltage, and the applied current, but the same can also be applied to manufacture of a different III-V semiconductor nanowire array.

Description

technical field [0001] The present invention relates to methods of cost-effectively fabricating metal mesh films. [0002] In addition, the present invention relates to a method for fabricating vertically aligned GaAs (gallium arsenide) semiconductor nanowire arrays using the method described above. [0003] In detail, the present invention involves using a metal thin film with aligned nanometer-sized pores as an anode, applying a voltage or current from the outside, and turning the pores (h + ) into a GaAs substrate, wet etching a semiconductor substrate with a crystallographic orientation, thereby manufacturing a large-area method of a vertically aligned GaAs semiconductor nanowire array with controllable diameter and length, a wide surface area and a high aspect ratio. Background technique [0004] Recently, due to the unique physical and structural properties of low-dimensional semiconductor nanostructures, research on utilizing low-dimensional semiconductor nanostructu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00H01L21/306
CPCH01L29/0676B82B3/00B82B3/0014B82B3/0019B82Y10/00B82Y40/00H01L21/30612H01L21/30635H01L21/3086H01L29/20Y10S977/762Y10S977/819Y10S977/888
Inventor 李雨申正镐
Owner KOREA RES INST OF STANDARDS & SCI
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