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Dual-gate thin film transistor and preparation method therefor, array substrate and display apparatus

A technology of thin film transistors and array substrates, which is applied in the fields of double-gate thin film transistors and their preparation, array substrates and display devices, can solve problems such as poor stability, and achieve the effects of increased production capacity, simple structure, and simplified manufacturing process steps

Active Publication Date: 2017-05-17
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Traditional thin film transistors generally have a single gate structure, which has problems such as poor stability

Method used

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  • Dual-gate thin film transistor and preparation method therefor, array substrate and display apparatus
  • Dual-gate thin film transistor and preparation method therefor, array substrate and display apparatus
  • Dual-gate thin film transistor and preparation method therefor, array substrate and display apparatus

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Figure 1a The plan view of shows the plan view of the dual-gate thin film transistor provided in this embodiment, Figure 1b for along Figure 1a Schematic diagram of the cross-sectional structure of the double-gate thin film transistor taken along the line A-A'.

[0048] Such as Figure 1a and Figure 1b As shown, the double-gate thin film transistor of this embodiment includes a base substrate 10; a first gate 130 is disposed on the base substrate 10; a first gate insulating layer 120 is disposed on the first gate 130, so The first gate insulating layer 120 includes a first via hole 20 exposing a part of the first gate 130; the active layer 15 is disposed on the first gate insulating layer 120, and the active layer 15 is connected to the first gate insulating layer 130. A gate 130 is at least partially overlapped in a direction perpendicular to the base substrate 10; the second gate insulating layer 121 is disposed on the active layer 15; the first electrode 160 and...

Embodiment 2

[0079] Figure 3a shows a plan view of the double-gate thin film transistor provided in Embodiment 2, Figure 3b for along Figure 3a A cross-sectional view of a double-gate thin film transistor taken along the middle line B-B'. Such as Figure 3a and 3b As shown, in the double-gate thin film transistor provided in this embodiment, the second gate insulating layer 122 completely covers the active layer 15, and the second gate 131, the first electrode 162 and the second electrode 163 are formed on the on the second gate insulating layer 122 . The second gate insulating layer 122 includes a fourth via hole 23 , a fifth via hole 24 , and a sixth via hole 25 exposing the first via hole 20 , which expose at least a part of the active layer 15 and are respectively located on both sides of the second gate 131 . The first electrode 162 is electrically connected to the active layer 15 through the fourth via hole 23, and the second electrode 163 is electrically connected to the act...

Embodiment 3

[0082] Figure 4a shows a plan view of the double-gate thin film transistor provided in Embodiment 3, Figure 4b for along Figure 4a A cross-sectional view of a double-gate thin film transistor taken along the middle line C-C'. In Embodiment 1 and Embodiment 2, the connection electrode 18 is disposed on the first passivation layer 17. In this embodiment, as Figure 4a and 4bAs shown, the connection electrode 180 is disposed on the second gate insulating layer 123 , and the connection electrode 180 is lap connected to the second gate 131 and electrically connected to the gate line 132 through the first via hole 20 . In this embodiment, the first passivation layer 17 is omitted, and the second gate insulating layer 123 is used to insulate the connecting electrode 180, the active layer 15, and the second electrode 165, thereby further reducing the number of film layers and simplifying the manufacturing process steps. Reduce production costs and effectively increase productio...

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Abstract

The invention discloses a dual-gate thin film transistor and a preparation method therefor, an array substrate and a display apparatus. The dual-gate thin film transistor comprises a substrate and a first gate, a first gate insulating layer, an active layer, a second gate insulating layer, a first electrode, a second electrode, a second gate and a connecting electrode which are arranged on the substrate in sequence, wherein the second gate and the first electrode and the second electrode are formed on the same layer; the first gate insulating layer comprises a first via hole for exposing a part of the first gate; and the connecting electrode is electrically connected with the second gate and electrically connected with the first gate through the first via hole. According to the dual-gate thin film transistor, the first electrode, the second electrode and the second gate are formed through a photolithography technique at the same time; by virtue of electric connection between the transparent connecting electrode and the first gate and the second gate, the dual-gate structure is realized, so that the number of film layers and masks is reduced, the production time is shortened, the production cost is lowered, capacity is effectively improved, the stability of the thin film transistor is improved, and response speed of the thin film transistor is optimized.

Description

technical field [0001] Embodiments of the present invention relate to a double-gate thin film transistor, a manufacturing method thereof, an array substrate, and a display device. Background technique [0002] With the development of display technology, liquid crystal displays (Liquid Crystal Display, LCD) and other flat display devices are increasingly widely used in mobile phones, televisions, Various consumer electronic products such as digital cameras and notebook computers. Thin film transistors are widely used in various display devices as switching components and driving components. With the development of portable electronic products, the size of display devices is getting smaller and smaller. In order to meet the increasingly smaller level of display devices, it is necessary to reduce the size of display devices , a very important semiconductor material used in thin film transistors also needs performance improvement as the size of display devices decreases. [00...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L21/336H01L21/34
CPCH01L29/6675H01L29/66969H01L29/78645H01L29/78663H01L29/78672H01L29/7869H01L29/78648H10K59/1213H01L33/42H10K50/84H10K59/131H10K71/00H10K2102/101
Inventor 曲连杰白金超
Owner BOE TECH GRP CO LTD
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