Graphite boat for epitaxial growth of horizontal liquid phase of mercury cadmium telluride thin film

Abstract

The invention discloses a graphite boat for epitaxial growth of a horizontal liquid phase of a mercury cadmium telluride thin film. The graphite boat comprises an upper cover, a bottom support, a sliding strip and a mother solution tank, wherein the bottom support comprises a groove with one bottom edge and two side edges; the sliding strip and the mother solution tank are arranged in the groove; the mother solution tank is fixed at the upper end of the groove; the upper surface of the mother solution tank is leveled with the upper surfaces of the two side edges; the sliding strip is located between the mother solution tank and the bottom edge of the bottom support, and can do movement relative to the mother solution tank along the bottom edge; the upper cover is of a solid structure and covers the side edges of the bottom support and the mother solution tank; a drainage channel is arranged in the upper cover; a starting point and a finishing point of the drainage channel are located on a contact surface of the upper cover and the mother solution tank. According to the graphite boat disclosed by the embodiment of the invention, a drainage groove is formed in the upper cover, and a temperature field, gas flow, gas-phase distribution and mercury pressure in an epitaxial growth process of the horizontal liquid phase can be improved to a certain extent, so that the problems about surface appearance and thickness uniformity of the mercury cadmium telluride thin film are solved.

Description

technical field [0001] The invention relates to the field of infrared detection, in particular to a graphite boat used for horizontal liquid phase epitaxial growth of mercury cadmium telluride thin films. Background technique [0002] Since HgCdTe material is a direct bandgap semiconductor material with adjustable bandgap width, which can cover the entire infrared band, HgCdTe material has been widely used in the preparation of different types of infrared detectors since the 1970s. At present, it has become the most widely used detector material in the field of infrared detection. After nearly 30 years of continuous development, many high-quality Hg 1-x Cd x Te epitaxial film and high-performance infrared detection device. Quasi-equilibrium state growth is the advantage of liquid phase epitaxy. The structural integrity of the grown crystal is very good. Except for the extension of substrate defects, mercury cadmium telluride liquid phase epitaxy itself can hardly introduc...

AI Technical Summary

Problems solved by technology

However, in addition to the characteristic morphology determined by the growth mechanism, there will be macroscopic ripples caused by the thickness difference on the surface of the liquid phase epitaxy, and this phenomenon is more obvious in the horizontal pusher process that uses HgTe powder as the mercury source required for the equilibrium growth of the mother liquor

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