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Semiconductor laser driving method and driving circuit

A driving method and driving circuit technology, applied in semiconductor lasers, lasers, laser parts and other directions, can solve the problems of complex structure and high cost

Active Publication Date: 2017-02-15
QINGDAO HISENSE LASER DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the above method is to add a speckle dissipation device outside the laser, and the structure is complex, resulting in high cost

Method used

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  • Semiconductor laser driving method and driving circuit
  • Semiconductor laser driving method and driving circuit
  • Semiconductor laser driving method and driving circuit

Examples

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Effect test

Embodiment 1

[0064] The driving process of the semiconductor laser provided by the embodiment of the present invention will be described in detail below. Figure 4 A schematic diagram of a driving process of a semiconductor laser provided by an embodiment of the present invention is exemplarily shown. This flow can be implemented in a semiconductor laser drive circuit. see Figure 4 , a semiconductor laser driving process provided by an embodiment of the present invention includes the following steps:

[0065] Step 401, generate a driving signal according to the driving cycle of the semiconductor laser, a driving cycle includes a high-level duration period and a low-level duration period, and the driving signal in the high-level duration period of a driving cycle is composed of N pulses , N is an integer greater than 1; wherein, the peak values ​​of at least two of the N pulses are not equal, and / or, at least two of the N-1 pulse intervals formed by the N pulses The intervals are not eq...

Embodiment 2

[0072] The implementation process of the second embodiment is basically the same as that of the first embodiment. In particular, when the peak values ​​of at least two pulses among the N pulses generated in step 401 are not equal, the N-1 pulse intervals formed by the N pulses can be equal.

[0073] In the second embodiment, the operating temperature of the semiconductor laser chip can generally be changed as long as the peak values ​​of at least two pulses among the N pulses in the high level duration period of a driving cycle are not equal. In order to effectively control the operating temperature of the semiconductor laser chip and increase the wavelength of the semiconductor laser output light, in the preferred solution provided by the embodiment of the present invention, the pulse peak value of N pulses in the high level duration period of one driving cycle of the semiconductor laser The changing rules of may include any one of the following rules a1 to a3.

[0074]Rule ...

Embodiment 3

[0094] The implementation process of the third embodiment is basically the same as that of the first embodiment. In particular, when the N-1 pulse intervals formed by the N pulses produced in step 401 are not equal, the peak values ​​of the N pulses may be equal.

[0095] In Embodiment 3, when at least two of the N-1 pulse intervals formed by N pulses in the high-level duration period of one driving cycle of the semiconductor laser have unequal pulse intervals, the N-1 pulse intervals formed by N pulses The change rules of pulse intervals may include any one of the following rules b1 to b3:

[0096] Rule b1, N-1 pulse intervals formed by N pulses during the high-level duration period of one driving cycle of the semiconductor laser are incremented.

[0097] Further, the N-1 pulse intervals formed by the N pulses in the high-level period of the semiconductor laser can be linearly increasing, or nonlinearly increasing, such as increasing according to the increasing part of the Ga...

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PUM

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Abstract

An embodiment of the invention relates to the technical field of semiconductor lasers, and more particularly to a semiconductor laser driving method and driving circuit for solving the problems of complicated structure and high cost as a speckle eliminating device is added mostly outside a laser in the prior art. In the embodiment of the invention, driving signals are generated in accordance with driving periods of a semiconductor laser, one driving period includes a high level duration segment and a low level duration segment, and driving signals in the high level duration segment of one driving period are composed of N pulses, where N is an integer greater than one; peak values of at least two of the N pulses are not equal, and / or at least two pulse intervals in N-1 pulse intervals formed by the N pulses are not equal; and the driving signals are outputted to the semiconductor laser. Therefore, the speckle suppression or elimination can be performed without the addition of a speckle eliminating device, and the structural complexity is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a semiconductor laser driving method and a driving circuit. Background technique [0002] Due to the advantages of good monochromaticity, good directionality, high brightness and linear spectrum, laser is very suitable for use in laser display systems. Laser display technology is considered to be the first after black and white display, color display and high-definition digital display. The fourth-generation display technology has the advantages of large color gamut display, high color saturation, high color resolution, flexible and variable display screen size, energy saving and environmental protection, etc. Due to the high coherence of laser light, when using laser light as a display light source, speckles will be generated on the screen. The existence of speckle seriously affects the imaging quality of laser display, and reduces the contrast and resolution of th...

Claims

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Application Information

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IPC IPC(8): H01S5/042
Inventor 田有良刘显荣
Owner QINGDAO HISENSE LASER DISPLAY CO LTD
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