Multilayer SOI material and preparation method thereof

Abstract

The invention discloses a multilayer SOI material and a preparation method thereof, and belongs to the technical field of semiconductor material preparation. The material is a multilayer SOI stacked structure, the top surface and the bottom surface of the stacked structure are silicon chips, and the middle portion is formed by alternative arrangement of silicon chips and BOX layers. In a preparation process, the stress of an oxidation sheet is removed through a CMP method, and bonding of the multilayer SOI can be stacked on the oxidation sheet. Surface treatment of the silicon chip with the surface of the oxidation sheet is performed for 1-5 minutes by employing HF, and plasma activation treatment is also performed; and surface treatment of the silicon chip with the surface of the silicon chip is performed for 1-5 minutes by employing concentrated H2SO4. After the treatment, normal-temperature bonding is then performed, low-temperature annealing can be performed at the temperature of lower than 500 DEG C, extremely good bonding quality is obtained, and the edge loss is less than 0.5 mm in the subsequent thinning process. The whole bonding process is accomplished at a low temperature, and the multi-layer SOI device layer is prevented from high temperature so that defects can be avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a multilayer SOI material and a preparation method thereof. Background technique [0002] SOI (Silicon On Insulator, silicon on insulating layer) technology introduces a buried oxide layer (BOX layer) between the top silicon and the back substrate. Due to its complicated manufacturing process and high cost, its technology has been adopted by foreign countries. Monopolized by a few countries, its application has been high in high-end products such as military, space and cutting-edge electrical appliances. In recent years, with the advancement of SOI manufacturing technology and the reduction of cost, silicon-on-insulator SOI has gradually moved towards the stage of commercial application and opened up the civilian market. It has become a necessary base material for new products in the IT industry. Especially in the 21st century, silicon-on-insulator SOI...

AI Technical Summary

Problems solved by technology

The traditional SOI manufacturing technology needs to go through many times of high temperature. The more times of high temperature, the worse the quality of each layer of silicon wafer will be.

As the number of layers increases, the stress inside SOI will also increase, which greatly limits the stacking of layers.

Moreover, general bonding cannot make the edge of the silicon wafer bond well, and the chamfering process is required to thin the silicon wafer. After thinning, the diameter of the top silicon wafer will be reduced by 3-6mm, so that the more layers are stacked, the top layer can be The smaller the area used

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