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Texturing pretreatment method and texturing method of diamond wire cut polycrystalline silicon sheet

A diamond wire cutting, polycrystalline silicon wafer technology, applied in the direction of post-processing, post-processing details, polycrystalline material growth, etc., can solve the problems of inability to meet market demand and reduce conversion efficiency, and achieve the goal of reducing reflectivity and increasing conversion efficiency. Effect

Active Publication Date: 2017-02-15
山西立新硅材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantages are also fatal. The refractive index of polycrystalline silicon wafers cut by diamond wire is 4-6% higher than that of ordinary mortar cutting, which also reduces the conversion efficiency of polycrystalline silicon wafers cut by diamond wire after they are made into batteries. , unable to meet market demand

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A pretreatment method for diamond wire-cut polysilicon solar cells, using diamond wire-cut P-type 156 polysilicon wafers as materials, divided into two groups A and A on average, wherein group A is according to the traditional texturing method, and group A is according to the method of the present invention deal with. After being processed separately, the refractive index is tested, and then made into a solar cell to measure the electrical parameters.

[0023] The treatment method of group A is as follows:

[0024] (1) The concentrations of hydrofluoric acid, hydrochloric acid, and nitric acid are 20vol%, 30vol%, and 20vol%, respectively, mixed according to the solution volume ratio of 2:1:1, and the polysilicon wafer is put into the solution for treatment. The treatment temperature is 0°C, and the treatment time is 300 seconds, then wash with DI water for 120 seconds, dry after cleaning;

[0025] (2) putting the polysilicon wafer obtained in step (1) into a continuou...

Embodiment 2

[0032] A pretreatment method for diamond wire-cut polysilicon solar cells, using diamond wire-cut P-type 156 polysilicon wafers as materials, and equally divided into two groups, b and B, wherein group b is according to the traditional texturing method, and group B is according to the method of the present invention deal with. After being processed separately, the refractive index is tested, and then made into a solar cell to measure the electrical parameters. The treatment method of group B is as follows:

[0033] (1) The concentrations of hydrofluoric acid, hydrochloric acid, and nitric acid are 20vol%, 30vol%, and 20vol%, respectively, mixed according to the solution volume ratio of 2:1:1, and the polysilicon wafer is put into the solution for treatment. The treatment temperature is 30°C, and the treatment time is 300 seconds, then wash with DI water for 120 seconds, dry after cleaning;

[0034] (2) putting the polysilicon wafer obtained in step (1) into a continuous resi...

Embodiment 3

[0041] A pretreatment method for polycrystalline silicon solar cells cut by diamond wires, using P-type 156 polysilicon sheets cut by diamond wires as materials, and equally divided into two groups of d and D, wherein group d is according to the traditional method of making texture, and group D is according to the method of the present invention deal with. After being processed separately, the refractive index is tested, and then made into a solar cell to measure the electrical parameters.

[0042] The treatment method of group D is as follows:

[0043] (1) The concentrations of hydrofluoric acid, hydrochloric acid, and nitric acid are 20vol%, 30vol%, and 20vol%, respectively, mixed according to the solution volume ratio of 2:1:1, and the polysilicon wafer is put into the solution for treatment. The treatment temperature is 30°C, and the treatment time is 300 seconds, then wash with DI water for 120 seconds, dry after cleaning;

[0044] (2) putting the polysilicon wafer obta...

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Abstract

The invention discloses a texturing pretreatment method and a texturing method of a diamond wire cut polycrystalline silicon sheet. The texturing method comprises the following steps: 1) cleaning and drying the diamond wire cut polycrystalline silicon sheet; 2) performing wet-oxygen oxidation on the cleaned and dried polycrystalline silicon sheet; 3) cleaning and drying the polycrystalline silicon sheet treated in the step 2); 4) performing solid-phase crystallization on the polycrystalline silicon sheet treated in the step 3); 5) texturing the polycrystalline silicon sheet obtained in the step 4) to obtain a textured polycrystalline silicon sheet. By adopting the method, cutting marks on the surface of polycrystalline silicon after the polycrystalline silicon sheet is cut by a diamond wire are reduced effectively, and the battery conversion efficiency is increased after texturing.

Description

technical field [0001] The invention relates to a pretreatment method for texturing polycrystalline silicon solar cells, in particular to a method for texturing pretreatment of diamond wire cut polycrystalline silicon wafers, and belongs to the field of polycrystalline silicon solar cells. Background technique [0002] With the vigorous development of the photovoltaic industry, many scholars and enterprises have to strictly control the cost of each production link of solar cells. Polycrystalline silicon wafers are currently the main material for making solar cells. Existing manufacturers of polycrystalline silicon ingot slices mainly use the method of mortar cutting, while monocrystalline silicon currently adopts the method of diamond wire cutting. Diamond wire cutting has great advantages over mortar cutting: (1) greatly improve the efficiency of silicon ingots, and diamond wire cutting has smaller slits than mortar cutting; (2) environmental protection; (3) high recycling ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B33/02C30B29/06
CPCC30B29/06C30B33/02C30B33/10
Inventor 刘立新
Owner 山西立新硅材料科技有限公司
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