Field-effect transistor material based on multi-fused ring, and its preparation method and application

Abstract

Disclosed are a field-effect transistor material based on a multi-fused ring and its preparation method and application. The chemical structure formula of the transistor material is shown in the specification, where N is in the range of 1 to 100; X is selected from one of the following atoms: O, S, Se, and Te; A is a group having a pi-conjugated structure selected from one of the following groups shown in the specification, and R is selected from one of the following groups shown in the specification. The transistor material provided by the invention has high efficiency and easy preparation. Compared with the existing organic field effect material, the transistor material has better flatness, good film-forming property and easy adjustment in energy level, and can greatly increase charge migration rate. The finished products can be used for flexible electronic devices, and have a wide range of potential applications such as organic light-emitting, organic light detectors, organic solar cells, pressure sensors, organic storage devices, flexible electronic plates, electronic paper, and many other fields.

Description

technical field [0001] The invention belongs to the field of field effect transistors, and in particular relates to a field effect transistor material based on multi-condensed rings and its preparation method and application. Background technique [0002] Organic Field Effect Transistors (OFETs) are the basic building blocks of organic circuits. They have the advantages of light weight, low cost, flexibility, and suitable for large-area preparation. They are widely used in organic sensors, organic memory devices, flexible flat panel displays, Electronic paper, radio frequency identification and many other fields have important application prospects. Transistor has achieved world-renowned development in the past half century and is one of the main cornerstones of modern electronics and microelectronics. With the further development of electronics in recent years, transistors are facing another revolution: the transition from traditional inorganic semiconductor transistors to...

AI Technical Summary

Problems solved by technology

[0004] Technical problem to be solved: Aiming at the shortcomings of existing organic transistor materials, such as poor planarity, short conjugate length, poor solubility, and difficult adjustment of energy levels, the present invention provides a field effect transistor material based on multi-condensed rings, the transistor The material has the advantages of superior planar structure, long conjugate length, good solubility, and easy regulation of energy level.

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