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A kind of extreme ultraviolet multilayer film and preparation method thereof

A multi-layer film, extreme ultraviolet technology, applied in the photoplate process, instruments, optics and other directions of the pattern surface, can solve the problems of affecting the imaging quality and shorten the service life of the system, and achieve the effect of spectral purification

Active Publication Date: 2019-11-05
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the thermal effect generated by infrared light will cause the surface shape change of the mirror in the optical system, which will greatly affect the imaging quality. At the same time, the thermal damage caused by infrared light will also greatly shorten the service life of the system.

Method used

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  • A kind of extreme ultraviolet multilayer film and preparation method thereof
  • A kind of extreme ultraviolet multilayer film and preparation method thereof
  • A kind of extreme ultraviolet multilayer film and preparation method thereof

Examples

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preparation example Construction

[0026] On the other hand, the present invention also provides a method for preparing an extreme ultraviolet multilayer film, comprising steps: S1, preparing a substrate; S2, preparing multiple cycles of Si / Mo layers on the substrate by magnetron sputtering ; S3, preparing a zigzag array structure layer on the Si / Mo layer; S4, depositing an infrared reflection layer on the zigzag array structure layer by magnetron sputtering.

[0027]Specifically, in one embodiment, the method for preparing an extreme ultraviolet multilayer film according to the present invention may include steps, step 1, preparing a fused silica substrate 1 with a roughness of 0.2nm; step 2, using magnetron sputtering to prepare 40 cycles Mo / Si layer 2, period 7nm, gamma value 0.4; step 3, using grazing angle deposition technology, depositing Si nanowires with an inclination angle of 30° on the surface of the multilayer film to form a triangular-like array structure 3, such as figure 2 As shown; step 4, usin...

Embodiment 1-7

[0033] The extreme ultraviolet multilayer film with infrared spectroscopic function comprises a substrate 1, a plurality of periodic Si / Mo layers 2, a zigzag array structure layer 3 and an infrared reflection layer 4 from bottom to top. The materials and thicknesses used in Examples 1-7 are shown in Table 1.

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Abstract

The invention relates to the field of extreme ultraviolet multilayer films, and specifically discloses an extreme ultraviolet multilayer film and a preparation method thereof. The extreme ultraviolet multilayer film of the present invention comprises in sequence: a substrate, a plurality of periodic Si / Mo layers, a zigzag array structure layer and an infrared reflection layer. The extreme ultraviolet multilayer film provided by the present invention can effectively realize the spectrum separation of infrared light and extreme ultraviolet light, and further realize the spectral purification of extreme ultraviolet light source.

Description

technical field [0001] The invention relates to the field of extreme ultraviolet multilayer films, in particular to the design and preparation of extreme ultraviolet multilayer films with infrared spectroscopic function. Background technique [0002] In recent years, extreme ultraviolet lithography (EUV Lithograph, EUVL) technology has been extensively developed. EUVL uses a 13.5nm wavelength light source as the working band, which can achieve a lithography line width of more than ten nanometers or even a few nanometers, thereby greatly increasing the integration of integrated circuits, which is extremely important for the miniaturization and low power consumption of electronic equipment. meaning. [0003] EUV lithography equipment generally consists of an EUV light source, an illumination system and a projection objective lens. Among them, the extreme ultraviolet light source provides the extreme ultraviolet radiation required for photolithography exposure. An extreme ul...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/24
CPCG03F1/24
Inventor 姚舜喻波金春水
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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