Integrated LED device and preparing method thereof

Abstract

The invention provides an integrated LED device and preparing method thereof. The device comprises several LED chips. The LED chip contains N type semiconductor layer, multiple quantum well luminous layer, P type semiconductor layer, N electrode and P electrode. The N electrode connects N type semiconductor layer electrically, and the P electrode connects P type semiconductor layer electrically. The graphical substrate is used for carrying the LED chips and comprises several primary interconnected areas and secondary interconnected areas. The N electrode and P electrode in the LED chips respectively connect the primary interconnected areas and secondary interconnected areas in the graphical substrate electrically. The device connects the LED chips and graphical substrate electrically with simple structure and manufacturing technology improving the reliability of device and realizing the large power and high current.

Description

technical field [0001] The invention relates to the field of semiconductor chips, in particular to an integrated LED device and a manufacturing method thereof. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic component that can emit light. This electronic component appeared as early as 1962. In the early days, it could only emit red light with low luminosity. Later, other monochromatic light versions were developed. Today, the light that can be emitted has covered visible light, infrared rays and ultraviolet rays, and the luminosity has also increased to a considerable extent. of luminosity. Because of its energy saving, environmental protection, safety, long life, low power consumption, low heat, high brightness, waterproof, miniature, shockproof, easy dimming, concentrated beam, easy maintenance, etc., it can be widely used in various indications, displays, decorations , backlight, general lighting and other f...

AI Technical Summary

Problems solved by technology

[0009] The trench is deep (usually 4-7μm), the etching time is long, and the cost is high;

[0010] In order to ensure effective electrical insulation, a thicker insulating coating film must be deposited. Due to incomplete coating or poor film compactness, the ESD and IR yields will be low. At the same time, the deposition time of thick insulating coating film High long-term cost;

[0011] There are grooves between different LED chips, the grooves are deep, and the angle of the side walls of the grooves is steep. The metal evaporation grows evenly on the surface of the LED chip, but the thickness of the side wall deposition is thin, which becomes the weak point of electrical connection.

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