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Method for manufacturing semiconductor device and substrate processing apparatus

A technology of substrate processing device and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as adverse effects of film characteristics, and achieve the effect of improving processing uniformity

Inactive Publication Date: 2017-01-04
KOKUSA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the substrate processing is repeated many times, there are cases where the by-products adhere to the inner wall surface of the supply part for supplying the gas and the inner wall surface of the processing chamber where the substrate is processed, and form particles, thereby causing damage to the substrate formed on the substrate. The properties of the membrane adversely affect the

Method used

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  • Method for manufacturing semiconductor device and substrate processing apparatus
  • Method for manufacturing semiconductor device and substrate processing apparatus
  • Method for manufacturing semiconductor device and substrate processing apparatus

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Experimental program
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no. 1 approach

[0035] (1) Configuration of the substrate processing device

[0036] use figure 1 , figure 2 and image 3 A first embodiment of the substrate processing apparatus of the present invention will be described. It should be noted that, if figure 1 As shown, the present embodiment is an apparatus for forming a thin film on a substrate, and is configured as a single-piece substrate processing apparatus that processes one substrate at a time.

[0037] (processing room)

[0038] Such as figure 1 As shown, the substrate processing apparatus 100 includes a processing vessel 202 . The processing container 202 is configured, for example, as a closed container having a circular cross section and a flat shape. In addition, the side wall and the bottom wall of the processing container 202 are made of metal materials such as aluminum (Al) and stainless steel (SUS), for example. A processing chamber 201 for processing a wafer 200 such as a silicon wafer as a substrate and a transfer s...

Deformed example 1

[0219] Next, use Figure 7 and Figure 8 Modification 1 of the present invention will be described. The substrate processing apparatus of Modification 1 differs from the substrate processing apparatus of the first embodiment only in that Figure 7 The third gas supply system shown and the controller for controlling the third gas supply system are the same as those of the first embodiment in other configurations.

[0220] Specifically, as Figure 7As shown, in the third gas supply system 245, the following configuration is formed: between the third gas supply source 245b and the MFC 245c, a valve 245f as an on-off valve, a box 245g as a gas storage part for storing gas, and and a valve 245h as an on-off valve.

[0221] use Figure 8 The operation of the third gas supply system in Modification 1 will be described. As mentioned above, Figure 8 with the first embodiment Figure 6 The difference lies in the flow rate of the heated purge gas and the flow mode of the heated ...

Deformed example 2

[0233] Next, use Figure 9 and Figure 10 Modification 2 of the present invention will be described. The substrate processing apparatus of Modification 2 differs from the substrate processing apparatus of the first embodiment only in that Figure 9 The third gas supply system shown and the controller for controlling the third gas supply system are the same as those of the first embodiment in other configurations.

[0234] Such as Figure 9 As shown, in the third gas supply system of Modification 2, the first gas storage system and the second gas storage system are connected in parallel between the third gas supply source 245b and the MFC 245c in the third gas supply system 245 of the first embodiment. System made. The first gas storage system is configured to include a valve 245f as an on-off valve, a tank 245g as a gas storage portion for storing gas, and a valve 245h as an on-off valve. The second gas storage system is configured in the following manner: it is provided ...

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Abstract

The invention provides a method for manufacturing a semiconductor device and a substrate processing apparatus. The invention provides a technique capable of improving the uniformity of substrate processing. The technique comprises the steps of a film forming process of supplying at least a film-forming gas and a first inert gas onto a substrate within a process chamber to form a film on the substrate; and a deposited film removing process of supplying a second inert gas having a temperature higher than that of the first inert gas directly into the process chamber, in a state where there is no substrate in the process chamber, to remove a deposited film deposited within the process chamber by the film forming process.

Description

technical field [0001] The present disclosure relates to a method of manufacturing a semiconductor device and a substrate processing apparatus. Background technique [0002] As one of the manufacturing steps of a semiconductor device (apparatus), a processing step of supplying a processing gas and a reactive gas to a substrate and forming a film on the substrate is sometimes performed. In recent years, such semiconductor devices tend to be highly integrated, and the pattern size has been significantly reduced. Therefore, it has been difficult to uniformly form a film on a substrate. [0003] In order to improve the uniformity of the film formed on the substrate, it is necessary to uniformly supply the processing gas to the processing surface of the substrate. However, if the substrate processing is repeated many times, there are cases where the by-products adhere to the inner wall surface of the supply part for supplying the gas and the inner wall surface of the processing ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L21/67
CPCH01L21/20H01L21/67207C23C16/345C23C16/4405C23C16/45542C23C16/45544C23C16/45546H01J37/32357H01J37/3244H01J37/32449H01J37/32724H01J37/32862H01L21/02263H01L21/324H01L21/67098H01L21/67248H01L21/7806H01L2924/35121H01J37/32522H01L21/02274
Inventor 佐佐木隆史山口天和
Owner KOKUSA ELECTRIC CO LTD
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