Semiconductor microwave heating device

Abstract

In the semiconductor microwave heating device disclosed in the present invention, the cavity is in the shape of a cuboid, the length of the cavity is 300mm-360mm, the width is 220mm-280mm, and the height is 66mm-126mm. The left side wall of the cavity is provided with a first feeding port. A second feeding port is opened on the right side wall of the cavity. The first feed port is provided with a first antenna, the distance from the center of the feed end of the first antenna rod of the first antenna to the back of the cavity is 68mm-78mm, and the distance from the top surface of the cavity is 40mm-50mm, the first The antenna mast is a conical antenna. The second feed port is provided with a second antenna, the second antenna rod of the second antenna is vertically connected with the third antenna rod of the second antenna, and the distance between the center of the feed end of the second antenna rod and the back of the cavity is 145mm-155mm , the distance from the top surface of the cavity is 55mm-65mm, and the third antenna rod is parallel to the bottom surface of the cavity and points to the front panel of the cavity. The above-mentioned semiconductor microwave heating device satisfies the above-mentioned conditions, and better standing wave values ​​can be obtained at the two feeding ports, and the isolation between the first antenna and the second antenna meets the design requirements.

Description

technical field [0001] The invention relates to the technical field of household appliances, and more specifically, to a semiconductor microwave heating device. Background technique [0002] In related technologies, semiconductor microwave heating technology continues to develop. In order to improve heating performance, such as heating efficiency and heating uniformity, everyone began to study multi-channel semiconductor microwave heating (microwaves are fed into the cavity from multiple feeding ports), and multi-channel Microwave heating can make the heating more uniform, and can also avoid the phenomenon of ignition of the feed port caused by feeding high power from one feed port. [0003] One feed port corresponds to one antenna, and multiple feed ports have multiple antennas. The antenna emits the microwaves generated and amplified by the microwave source, which can be transmitted to the cavity through a waveguide or without a waveguide. Theoretically speaking, the anten...

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Problems solved by technology

[0003] One feed port corresponds to one antenna, and multiple feed ports have multiple antennas. The antenna emits the microwaves generated and amplified by the microwave source, which can be transmitted to the cavity through a waveguide or without a waveguide. Theoretically speaking, the antenna has good radiation Microwave capability, it also has a good ability to absorb microwaves, that is to say, if the multi-channel semiconductor microwave heating equipment is not well designed, there will be situations where the channels emit and absorb microwave power from each other. The disadvantages caused by this are first It is because the energy obtained by the object to be heated is not enough. In severe cases, one channel will absorb the microwave power of other channels. If the microwave power is too high, the corresponding microwave source will be burned

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