Composite reaction chamber extension device used for growing electronic device and growing method

Abstract

The invention discloses a composite reaction chamber extension device used for growing an electronic device. The composite reaction chamber extension device comprises a physical deposition reaction chamber and a chemical deposition reaction chamber. Each of the two reaction chambers is provided with a source material conveying pipeline, a cooling water pipeline, a cover plate, a controller and a sample tray, and the two reaction chambers are connected with each other through a transfer chamber and used for conveying samples. According to the composite reaction chamber extension device, the beneficial effects of physical deposition and chemical deposition are fully utilized, and a buffering layer and a transition layer needed for heteroepitaxy are deposited through the physical deposition reaction chamber and are transmitted to the chemical deposition reaction chamber through the transfer chamber to deposit a device structure. According to the composite reaction chamber extension device, deposition from the physical deposition reaction chamber to the chemical deposition reaction chamber can be achieved, and the purpose that chemical deposition is achieved firstly, and then physical deposition is conducted can be achieved. The problems that due to the fact that a metal organic vapor deposition device is utilized for growing a buffering layer in the prior art, the quality of crystals is poor, and the dislocation density is high can be solved, and industrialization and functionization of the device are facilitated.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material growth equipment, and relates to epitaxial growth equipment for growing electronic devices on a substrate, in particular to a compound reaction chamber epitaxial equipment and a growth method for growing electronic devices. Background technique [0002] In recent years, the third-generation wide-bandgap semiconductor material gallium nitride and its III / V series nitrides have made remarkable achievements in the fields of lighting and electronics industries. Due to the excellent physical and chemical properties of gallium nitride materials, it has been widely used. For example, gallium nitride-based light-emitting diodes on sapphire substrates have been widely used in the field of lighting. Existing research also shows that gallium nitride has potential applications in solar cells, ultraviolet detectors, lasers, electronic devices and other fields. [0003] At present, the material...

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Problems solved by technology

[0004] In order to overcome the deficiencies of the above-mentioned prior art, the present invention provides a composite reaction chamber epitaxy equipment for growing electronic devices, including a physical deposition chamber and a chemical deposition reaction chamber, which can solve the problem of the growth buffer of metal-organic vapor deposition equipment in the prior art. Problems with poor layer crystal quality and high dislocation density

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