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A method and system for measuring saturation current of components

A saturation current and component technology, applied in the field of failure analysis of semiconductor devices, can solve the problems of misjudgment of abnormal analysis results, poor accuracy of saturation current value, failure analysis can not continue, etc., to achieve the effect of good data accuracy

Active Publication Date: 2019-04-30
WUHAN XINXIN SEMICON MFG CO LTD
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Problems solved by technology

Especially when the channel resistance of the component is small (usually 100-1000 Ω), the resistance value of the probe itself (100 Ω) and the contact resistance value are relatively larger than the channel resistance value, so the impact on the final measurement result is more obvious. The accuracy of the measured saturation current value is poor, which affects the misjudgment of the abnormal analysis results, making the failure analysis unable to continue

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  • A method and system for measuring saturation current of components
  • A method and system for measuring saturation current of components

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Embodiment Construction

[0032] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. Of course, the present invention can also have other embodiments besides these detailed descriptions.

[0033] The method for measuring the saturation current of a component of the present invention applies a voltage identical to that of the component to the gate (Gate) of the component to convert the voltage between the source (Source) and the drain (Drain) of the component to The channel is fully turned on; then a variable current is applied across the channel, and the voltage difference across the channel is detected using a nanoprobe station (Nanoprober); when the voltage difference across the channel reaches the drain operating voltage, read At this time, the current value applied to the channel is the saturation current value of the component.

[0034] The measurement method and measurement system of the present invention w...

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Abstract

The present invention relates to the technical field of failure analysis of semiconductor devices, and in particular to a method and system for measuring the saturation current of components. monitor and a plurality of probes; a component is placed on the adsorption chuck and electrically connected to the electrical monitor; the probe station uses a first probe to apply a fixing a voltage, and applying a variable current at both ends of the channel of the component by using a second probe and a third probe; and using the electrical monitor to monitor the variable current at both ends of the channel monitor.

Description

technical field [0001] The invention relates to the technical field of failure analysis of semiconductor devices, in particular to a method and system for measuring saturation current of components. Background technique [0002] In the field of semiconductors, when performing failure mode analysis on components, it is necessary to use probes to test the current characteristics of components to measure the saturation current of components. The existing method of measuring the saturation current is to use three probes to connect to the three terminals of Gate / Source / Drain (gate / source / drain) of the component, fix the voltage at both ends of Source / Drain, and scan the voltage at the Gate terminal. At the same time, detect the current at the Drain terminal to obtain the I d —V g (drain current - gate voltage) curve. When the Gate terminal voltage is applied to the operating voltage, the obtained Drain terminal current value is the saturation current of the component. The cur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R19/00
CPCG01R19/00
Inventor 汤光敏张顺勇高慧敏卢勤
Owner WUHAN XINXIN SEMICON MFG CO LTD
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