Method for preparing metal oxide thin-film resistive random access memory through plasma processing

Abstract

The invention provides a method for preparing a metal oxide thin-film resistive random access memory through plasma processing, wherein the method belongs to the technical field of electronic films and components. The memory comprises the components of a substrate, a lower electrode, a fluorine-doped metal oxide and an upper electrode. According to the method, a relatively novel plasma processing method is utilized for conveniently and controllably preparing a metal oxide resistive random access functional layer with uniform defect distribution. The metal oxide resistive random access functional layer can conveniently and quickly realize switching between formation and switching-off of a conductive channel under the function of an electric field, namely switching between a low-resistance state and a high-resistance state of the device. Furthermore, the method has an ultralow working voltage. The upper electrode is prepared through a mask method, thereby greatly reducing device dimension and improving integration density. Through testing, the metal oxide thin-film resistive random access memory prepared according to the method has excellent performance. In one word, the invention realizes the method for preparing the metal oxide thin-film resistive random access memory with advantages high performance and small dimension, wherein the method has advantages of simple operation, effective controllability, high efficiency and low cost. Furthermore relatively high performance consistency is realized. The method is suitable for batch resistive random access array production in future, and furthermore has good application prospect.

Description

technical field [0001] The invention belongs to the technical field of electronic thin films and components, in particular to a conductive filament type resistive variable memory based on a silicon-based substrate. Background technique [0002] Resistive random access memory (RRAM) is a non-volatile memory device (NVM) that controls data storage and reading based on resistance changes. This type of memory is considered to be one of the important research directions for future memory development because of its low power consumption, high storage density, high read / write rate, simple structure, and easy miniaturization. The resistive switch layer of this type of memory device is generally dominated by binary and ternary oxide films. Including titanium oxide, nickel oxide, zirconium oxide, aluminum oxide, oxide, lithium niobate, bismuth ferrite, etc. As one of the traditional N-type binary oxides, titanium oxide has the characteristics of controllable structure, easy preparat...

AI Technical Summary

Problems solved by technology

However, at present, more oxygen plasma treatment is used, which is not easy to completely oxidize titanium to +4 valence, which affects the stability of device performance.

At the same time, the efficiency of defect introduction is not high, requiring higher voltage and longer reaction time

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