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Memristor and electronic synaptic function enhancing method therefor

An electronic synapse and memristor technology, applied in instruments, electrical components, static memory, etc., can solve problems such as large performance fluctuations and poor stability, and achieve the effects of improving accuracy, reducing uncertainty, and improving reproducibility

Active Publication Date: 2016-11-09
FUZHOU UNIV
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AI Technical Summary

Problems solved by technology

At present, memristor-based electronic synaptic devices have the characteristics of large performance fluctuations and poor stability.

Method used

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  • Memristor and electronic synaptic function enhancing method therefor
  • Memristor and electronic synaptic function enhancing method therefor
  • Memristor and electronic synaptic function enhancing method therefor

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Embodiment Construction

[0033] The present invention provides preferred embodiments, which are only used for further description of the present invention, and should not be considered as being limited to the embodiments set forth herein, nor can they be interpreted as limiting the protection scope of the present invention. Some non-essential improvements and adjustments made to the present invention still belong to the protection scope of the present invention. Unless otherwise specified, the experimental methods used in the following preferred embodiments are conventional methods; the materials, reagents, etc. used, unless otherwise specified, can be obtained from commercial sources. In the figure, the structures of the substrate, the left electrode, the oxide, and the right electrode are idealized models, and should not be regarded as strictly stipulating their parameters and geometric dimensions. Here, the referenced figures are schematic diagrams of idealized embodiments of the present invention,...

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Abstract

The invention relates to a memristor and an electronic synaptic function enhancing method therefor. The Memristor comprises a substrate, a first terminal electrode, a plasma-treated oxide medium and a second terminal electrode, wherein the first terminal electrode is arranged on the substrate, and the plasma-treated oxide medium is arranged on a right side of the first terminal electrode or above the first terminal electrode; if the oxide medium is arranged on the right side of the first terminal electrode, the second terminal electrode is arranged on a right side of the oxide medium; if the oxide medium is arranged above the first terminal electrode, the second terminal electrode is arranged above the oxide medium. According to the memristor and the electronic synaptic function enhancing method therefor, the oxide medium is treated via plasma, reproducibility and an adjusting scope of a synaptic weight change rate can be improved, and therefore synaptic performance can be improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, in particular to a memristor and a method for enhancing its electronic synapse function. Background technique [0002] The advent of the era of big data creates an urgent need for high-performance computing. But in the traditional computing architecture, the data transfer rate between the central processing unit and the memory is limited, making the computing system through the von Neumann architecture challenging. Circuits with parallel computing functions, as well as information storage and processing capabilities, can eliminate this bottleneck. In this computing system, electronic devices similar to biological synapses are crucial basic devices. At present, electronic synaptic devices based on memristors have the characteristics of large performance fluctuations and poor stability. Since the use of memristors as electronic synapses is still a relatively new field, there are f...

Claims

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Application Information

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IPC IPC(8): H01L45/00G11C13/00
CPCG11C13/0009H10N70/20H10N70/011
Inventor 赖云锋陈凡邱文彪程树英林培杰俞金玲周海芳
Owner FUZHOU UNIV
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