Thermal resistance obtaining method

An acquisition method and technology of thermal resistance, applied in instruments, measuring devices, measuring electricity, etc., can solve the problems of high cost, low reliability and accuracy, and achieve the effect of improving reliability and accuracy

Active Publication Date: 2016-11-09
SOI MICRO CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] The invention provides a thermal resistance acquisition method, which solves the technical problems of high cost, low reliability and precision in the thermal resistance acquisition method in the prior art

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Embodiment Construction

[0030] The invention provides a thermal resistance acquisition method, which solves the technical problems of high cost, low reliability and low precision in the thermal resistance acquisition method in the prior art, and achieves the technical effect of improving reliability and precision and reducing cost.

[0031] In order to better understand the above technical solutions, the above technical solutions will be described in detail below in conjunction with the accompanying drawings and specific implementation methods. It should be understood that the embodiments of the present invention and the specific features in the embodiments are detailed descriptions of the technical solutions of the present application. , rather than limiting the technical solutions of the present application, the embodiments of the present application and the technical features in the embodiments can be combined without conflict.

[0032] see figure 1 , a thermal resistance acquisition method provid...

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Abstract

The invention belongs to the technical field of semiconductor reliability and discloses a thermal resistance obtaining method. The method comprises the following steps: manufacturing an active region diffused resistor on the silicon membrane of a MOS device; obtaining the resistor temperature features of the resistor; obtaining the resistance of the resistor when the MOS device works; based on the resistor temperature features, obtaining the temperature of the resistor; obtaining the temperature difference [delta] T prior to and after when the MOS device works and the thermal dissipation power [delta] P of the MOS device; based on the formula Rth=[delta] T / [delta] P, calculating the thermal resistance Rth. The invention provides a reliable and accurate high thermal resistance obtaining method.

Description

technical field [0001] The invention relates to the technical field of semiconductor reliability, in particular to a method for obtaining thermal resistance. Background technique [0002] Due to the poor thermal conductivity of the BOX layer, which is about one hundredth that of silicon, it hinders the cooling of the SOI device, causing the device temperature to rise, which in turn produces a severe self-heating effect. The self-heating effect degrades the carrier mobility, increases the junction leakage, increases the probability of impact ionization, and negative differential conductance occurs in the saturation region. It should be noted that the self-heating effect can be significant when the power is high at DC. But when the device is operated at high frequencies, the self-heating effect disappears. Since most circuits operate at the boundary frequency of the self-heating effect, for accurate circuit simulation, it is necessary to extract parameters related to the sel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 卜建辉李彬鸿罗家俊韩郑生
Owner SOI MICRO CO LTD
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