Random Access Memory and Memory Access Method

Abstract

The invention discloses a random access memory and a memory access method, and can avoid reading interference and improve data reading speed. One embodiment of the random access memory comprises a word line, a word line driving unit, a voltage regulation unit and a memory unit, wherein the word line driving unit is coupled to the word line and is used for receiving an access control signal so as to generate first word line enabling voltage; the voltage regulation unit comprises a switching module and a capacitor, wherein the switching module is coupled to the word line and is used for receiving a control signal to present conduction or non conduction according to the control signal, and the capacitor is coupled to the switching module and is used for regulating the voltage level of the word line enabling voltage according to the conduction situation of the switching module; and the memory unit is coupled to the word line and is enabled according to the word line enabling voltage.

Description

technical field [0001] The present invention relates to a random access memory and a memory access method, in particular to a method of using a switch module and a capacitor to elastically adjust the enable voltage of a word line to realize a word line drive suppression mechanism Random access memory and methods. Background technique [0002] Generally speaking, the existing random access memory includes a memory cell array with multiple columns, each column has a plurality of memory cells, and each memory cell corresponds to and is coupled to a word line; each word The voltage of the line is controlled by the word line driver corresponding to the word line; each memory cell is provided with a latch module and a gate pass transistor as a switch; the latch module has two storage nodes, and the gate pass transistor The gate, source, and drain are respectively coupled to the corresponding word line, one of the storage nodes, and the corresponding bit line. [0003] When data ...

AI Technical Summary

Problems solved by technology

However, the disadvantage of the known technology is that the speed of reading data from the memory cell will be significantly slower as the enabling voltage of the word line is reduced, and the enabling voltage or reading speed cannot be adjusted.

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