Nanosecond solid-state laser modulation system and bonded wafer separating method

Abstract

The invention relates to a nanosecond solid-state laser modulation system and a bonded wafer separating method. The method is characterized by comprising the following steps: (1) placing bonded wafers on a bearing platform; (2) emitting, by a laser generator, Gaussian laser beams, and modulating the Gaussian laser beams via a beam shaping mirror to generate square light spots; focusing the laser beams of the square light spots to penetrate through a glass slide and arrive at a release layer, ashing the releaser layer, and ensuring a bonding layer not damaged; (3) adjusting the relative positions of the laser generator and the bearing platform, so that the moved positions of the square light spots irradiated onto the bonded wafers are ashed, and the light spots after and before moving are partially superposed; sequentially moving the light spots to realize laser irradiation of the whole surface of the bonded wafers; and (4) after laser irradiation and ashing in the above steps, taking the glass slide down. According to the method, the release layer in the temporary bond is ashed by laser, so that batch production can be realized, yield loss is eliminated, and the output efficiency is greatly improved at the same time.

Description

technical field [0001] The invention relates to a process and system for wafer processing, in particular to a nanosecond solid-state laser modulation system and a method for separating bonded wafers, belonging to the technical field of microelectronic packaging. Background technique [0002] With the development of semiconductor technology, electronic devices are getting smaller and smaller, more and more integrated, more and more functions are included, and the overall performance of devices is getting stronger and stronger. Therefore, the production of thin device wafers and thin chips The processing has become a trend in the mass production of ultra-thin products, but because of its instability, temporary bonding and debonding processes have been introduced on this basis. [0003] Temporary bonding and debonding has the following advantages: First, the carrier wafer provides mechanical support and protection for the thin device wafer, so that the backside process can be p...

AI Technical Summary

Problems solved by technology

[0004] Temporary bonding technology solves the problem of thin wafer holding and fragmentation during the process, but due to many unstable factors during wafer separation, there is also a great risk of fragmentation during wafer separation

At present, the dielectric treatment methods for wafer separation include heat treatment and Zonebond, etc., but there are certain defects.

Heat treatment is neglected by many manufacturers because of the warping of the temporary bonding body due to heating and certain thermal budget considerations; Zonebond technology is currently more popular, but the disadvantage is that the pre-soaking time before debonding is long and wasteful. More chemical reagents, which affect the yield and cannot achieve mass production

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