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CMOS image sensor anti-latching system based on space application

An image sensor and anti-latch-up technology, which is applied in radiation control devices, etc., can solve problems such as device function failure, burnout, and prone to latch-up, so as to reduce the probability of latch-up, make the power-on process stable and reliable, and reduce surge The effect of current

Inactive Publication Date: 2016-09-21
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Claims
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Problems solved by technology

[0003] The present invention provides a CMOS image sensor anti-latch-up system based on space applications to solve the problem that the CMOS image sensor in the existing space application is prone to latch-up, resulting in device function failure or even burning.

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specific Embodiment approach 1

[0015] Specific implementation mode 1. Combination figure 1 and figure 2 Describe this embodiment, based on the CMOS image sensor anti-latch-up system for space applications, the system can quickly detect the latch-up phenomenon, cut off the power supply or reduce the supply voltage to be insufficient to maintain the regeneration of the parasitic circuit and the latch-up state.

[0016] Specifically, it is composed of an external input power supply, a processing part and a focal plane part. The processing part is mainly composed of controller, current detection module, comparator, controller core power supply module, controller IO power supply module, controller peripheral circuit power supply module, level conversion chipset and differential interface chipset; the controller core power supply module and the controller IO power supply module supply power to the core and IO of the controller respectively, and the controller peripheral circuit power supply module supplies powe...

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Abstract

The invention provides a CMOS image sensor anti-latching system based on space application, and relates to a CMOS image sensor anti-latching system, solving the problem that latching easily occurs in a CMOS image sensor in a current space application so that the function of a device is disabled and is even burned up. The CMOS image sensor anti-latching system based on space application includes an external input power supply, a processing part and a focal plane portion, wherein the external input power supply supplies power for the processing part and the focal plane part at the same time; the processing part includes a controller, a current detection module, a comparator, a controller core power supply module, a controller IO power supply module, a controller peripheral circuit power supply module, a level switching chipset and a difference interface chipset; the focal plane part includes n groups of protection resistors, n groups of voltage transformation chips and a reference source circuit; after the external input power supply outputs the voltage stably, time-sharing electrification is performed on each part, and the surge current of a DC / DC module power supply system is reduced; and for the electrification sequence of each part of the controller, the first is the core part; the second is the IO part and the last is the peripheral part, so that the situation that the output voltage is reduced during the boosting process because each part is electrified at the same time can be avoided and stable and reliable electrification of the controller can be guaranteed.

Description

technical field [0001] The invention relates to an anti-latch system of a CMOS image sensor, in particular to an anti-latch system of a CMOS image sensor based on space application. Background technique [0002] At present, compared with CCD image sensors, CMOS image sensors have the advantages of not requiring external drivers, analog-to-digital conversion circuits, small size and low power consumption, but they are prone to latch-up in space environment applications, resulting in device function failure or even burning. Low-dropout power supply chips such as MAX883 have a current-limiting protection function. When the voltage difference is greater than 0.7V and the output voltage is greater than 0.8V, the maximum output current is 430mA; when the output voltage is lower than 0.8V, the maximum output current is 170mA. However, the thermal protection function of the device at 160°C uses the principle that the conduction voltage of the PN junction of the transistor decreases ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/146
Inventor 余达刘金国郭永飞司国良宁永慧马天波王灵杰
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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