Method for manufacturing monocrystal material thin layer structure on supporting substrate

Abstract

The present invention provides a method for manufacturing a single crystal material thin layer structure on a supporting substrate, comprising: providing a single crystal substrate, using one surface of the single crystal substrate as an injection surface, injecting performing co-implantation of the first type of ions and the second type of ions in the bottom to form a defect layer at a preset depth of the single crystal substrate; providing a supporting substrate so that the implanted surface of the single crystal substrate is in contact with the The surface of the support substrate is in close contact; part of the single crystal substrate is peeled off along the defect layer, and a part of the single crystal substrate is transferred to the support substrate to form a thin film on the support substrate. layer structure. The present invention adopts co-implantation of two different types of ions in the single crystal substrate, can prepare a single crystal material thin film, effectively reduces the total ion implantation dose required for stripping and transferring the single crystal material thin film layer, and shortens the preparation cycle , which saves the production cost; it can also solve the problem that some materials cannot be stripped by single ion implantation.

Description

technical field [0001] The invention belongs to the technical field of single crystal material preparation, in particular to a method for manufacturing a thin layer structure of single crystal material on a support substrate. Background technique [0002] Single crystal thin films have a wide range of uses in reducing device volume, reducing power consumption, and expanding material applications. The current method of processing thin film materials by mechanical cutting and grinding and polishing is limited by the mechanical strength of the material itself, and the thin film is limited to more than tens of microns, which cannot reach a thickness of about one micron. The growth of thin films on supporting substrates by physical or chemical methods has been widely used, but this method is greatly limited by the substrate material. There is often a lattice mismatch and thermal expansion coefficient mismatch between the grown film and the substrate, and the film is usually poly...

AI Technical Summary

Problems solved by technology

[0005] Aiming at the above-mentioned deficiencies in the prior art, the present invention proposes a method for manufacturing a thin-layer structure of a single crystal material on a supporting substrate, which is used to solve the problem of the inability to prepare high-quality single crystals on a supporting substrate in the prior art Thin Film Problems

Images