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Inverted blue light quantum-dot thin film electroluminescence device

An electroluminescent device, quantum dot light emitting technology, applied in the direction of electric solid state devices, electrical components, semiconductor devices, etc., can solve the problems of large HOMO energy level, high hole injection barrier, and difficult hole injection

Inactive Publication Date: 2016-08-24
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, holes in traditional quantum dot thin film electroluminescent devices (QLED) are not easy to inject, and hole injection materials with high HOMO (Highest Occupied Molecular Orbital, highest occupied molecular orbital) energy level are needed to help hole injection
Especially for blue light quantum dot thin film electroluminescent devices, the HOMO energy level of blue light quantum dots is generally large, about 6.8eV, while the work function of general transparent anodes is less than 5.0eV, the difference between the two is far, resulting in QLED The hole injection barrier in the device is generally high, and the HOMO energy level of commonly used hole injection materials is generally 5.0eV ~ 5.5eV, which cannot meet the requirements of hole injection.

Method used

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Examples

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preparation example Construction

[0051] In addition, the present invention also provides a method for preparing the above-mentioned inverted blue light quantum dot thin film electroluminescent device 10, such as image 3 As shown, the method includes the following steps S110-S140.

[0052] S110, providing a substrate, and forming a cathode on the substrate.

[0053]The material of the substrate can be glass, and the substrate can be ultrasonically treated with detergent, acetone, ethanol and isopropanol for 15 minutes each. Then vapor deposition, sputtering, sputtering or electrochemical vapor deposition on the substrate to form the cathode. The material of the cathode can be indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), indium-doped zinc oxide (IZO), etc., and the thickness of the cathode is 80nm-200nm.

[0054] Preferably, indium tin oxide (ITO) is sputtered onto the glass substrate by sputtering.

[0055] In this embodiment, after the cathode is formed on the s...

Embodiment 1

[0067] The structure of the inverted blue quantum dot thin film electroluminescent device is a substrate, a cathode, an electron transport layer, a blue quantum dot light-emitting layer, a hole transport layer and an anode, wherein the hole transport layer includes a first hole transport layer, a second hole transport layer stacked in sequence. Two hole transport layers and a third hole transport layer. The side of the first hole transport layer away from the second hole transport layer is in close contact with the blue light quantum dot light-emitting layer. Wherein, the thickness of the first hole transport layer is 8 nm, and the material of the first hole transport layer is a mixture of the first hole transport material (HTL1) and the second hole transport material (HTL2), wherein HTL1 is 2- Hydroxy-3-methyl-2-cyclopenten-1-one (mCP), HTL2 is 3,5-di(9hydro-carbazol-9-yl)-nitrogen, nitrogen-biphenylamine (DCDPA), The mass ratio of mCP to DCDPA is 3:2. The thickness of the ...

Embodiment 2

[0073] The thickness of the first hole transport layer in the inverted blue light quantum dot thin film electroluminescence device of the present embodiment is 10nm, and the material of the first hole transport layer is the mixture that HTL1 and HTL2 form, and wherein HTL1 is mCP, and HTL2 is DCDPA, The mass ratio of mCP to DCDPA is 3:2. The thickness of the second hole transport layer is 20nm, and the material of the second hole transport layer is a mixture of HTL2 and HTL3, wherein HTL2 is DCDPA, HTL3 is BTPD, and the mass ratio of DCDPA to BTPD is 3:4. The thickness of the third hole transport layer is 30nm, and the material of the third hole transport layer is a mixture of HTL3 and HTL4, wherein HTL3 is BTPD, and HTL4 is WO 3 , BTPD and WO 3 The mass ratio is 2:3. All the other are identical with embodiment 1.

[0074] The specific preparation method of the inverted blue light quantum dot thin film electroluminescent device is the same as that of Example 1.

[0075] Th...

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Abstract

An inverted blue light quantum-dot thin film electroluminescence device disclosed by the present invention comprises a substrate, a cathode, an electronic transmission layer, a blue light quantum-dot luminescent layer, hole transport layers and an anode which are laminated orderly, and the hole transport layers comprise a first hole transport layer, a second hole transport layer and a third hole transport layer which are laminated orderly. The thickness of the first hole transport layer is between 5 nm and 10 nm, and the HOMO energy levels of the first hole transport layer, the second hole transport layer and the third hole transport layer are reduced orderly, thereby forming the ladder-like potential barrier between the blue light quantum-dot luminescent layer and the anode, improving the hole-injection ability of the hole transport layers gradually, and satisfying the hole injection requirement of the blue light quantum-dot thin film electroluminescence device.

Description

technical field [0001] The invention relates to the technical field of light-emitting devices, in particular to an electroluminescent device with an inverted blue quantum dot thin film. Background technique [0002] Quantum dots (QDs, quantum dots) are some extremely small semiconductor nanocrystals that cannot be seen by the naked eye, and the particle size is generally less than 10nm. When stimulated by light or electricity, quantum dots can emit colored light. The color of light is determined by the composition, material, size and shape of quantum dots. This feature enables quantum dots to change the color of light emitted by the light source. Because electrons, holes, and excitons are quantum-confined in the three-dimensional direction, the energy band structure of QDs changes from a bulk continuous structure to a discrete energy level structure with molecular characteristics. When the particle size of QDs is equal to or smaller than the Bohr radius of Wannier excitons ...

Claims

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Application Information

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IPC IPC(8): H01L51/50B82Y40/00
CPCB82Y40/00H10K50/156
Inventor 曹进周洁谢婧薇魏翔俞浩健
Owner SHANGHAI UNIV
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