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LED chip with ITO thin film structure and preparation method of LED chip

A technology of LED chip and thin film structure, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of metal electrode layer detachment, ITO film layer detachment, metal electrode layer pad performance, AlGaInP-based chip reliability, etc. Achieve the effects of reducing contact voltage, improving adhesion and integrity, improving quality and yield

Active Publication Date: 2016-08-24
NANCHANG KAIXUN PHOTOELECTRIC CO LTD
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  • Application Information

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Problems solved by technology

In practical applications, a layer of ITO film layer is grown on the GaP layer first, and then the metal electrode layer used as the pad material is deposited. However, it is found in the bonding wire test of the pad that the ITO film layer is prone to fall off, The abnormal phenomenon that the metal electrode layer falls off, which will seriously affect the pad performance of the metal electrode layer and the reliability of AlGaInP-based chips

Method used

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  • LED chip with ITO thin film structure and preparation method of LED chip
  • LED chip with ITO thin film structure and preparation method of LED chip
  • LED chip with ITO thin film structure and preparation method of LED chip

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Embodiment Construction

[0027] The present invention will be described in further detail below in conjunction with the embodiments and with reference to the accompanying drawings.

[0028] An LED chip with an ITO film structure, comprising a GaAs substrate 100, on which a buffer layer 101, an n-AIGaInP confinement layer 102, a multi-quantum well active layer 103, and a p-AIGaInP confinement layer are sequentially arranged on the GaAs substrate 100 104 and p-GaP window layer 105, on p-GaP window layer 105, be provided with ITO film layer 106, be provided with metal electrode layer 109 on ITO film layer 106, make back electrode 201 below GaAs substrate 100; The electrode layer 109 includes a main electrode and an extension electrode, the main electrode is connected to the p-GaP window layer 105 , and the extension electrode is connected to the ITO film layer 106 .

[0029] A kind of preparation method of LED chip with ITO film structure, concrete steps are as follows

[0030] 1. Preparation of light-e...

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Abstract

The invention discloses an LED chip with an ITO thin film structure and a preparation method of the LED chip, and belongs to the field of semiconductor light-emitting diodes. The method comprises the following steps: firstly, fabricating an epitaxial wafer of the light-emitting diode; fabricating a patterned dielectric film layer on the epitaxial wafer and fabricating the patterned ITO thin film layer and p-GaP window layer in an etching manner; and fabricating a metal electrode layer on the patterned ITO thin film layer and p-GaP window layer. The metal electrode layer comprises a main electrode and an extended electrode. The patterned ITO thin film layer and p-GaP window layer are adopted as contact layers; and the main electrode as a bonding pad is connected to the p-GaP window layer; and the extended electrode is connected to the ITO thin film layer. The adhesiveness of the overall metal electrode layer is improved; a stable working voltage of a light-emitting device is ensured; the bonding wire reliability of a product is improved; and the quality and the yield of the product are greatly improved.

Description

technical field [0001] The invention relates to the field of semiconductor light emitting diodes, in particular to an LED chip with an ITO thin film structure and a preparation method thereof. Background technique [0002] It has the advantages of high luminous efficiency, low energy consumption, long life, high safety, and high environmental protection. It is a lighting method with broad application prospects and has been valued by more and more countries. At present, LEDs have been widely used in the field of high-efficiency solid-state lighting, such as display screens, automotive lights, backlights, traffic lights, and landscape lighting. [0003] Such as figure 1 As shown, a conventional AlGaInP light-emitting diode includes a GaAs substrate 100, a buffer layer 101, an n-AIGaInP confinement layer 102, an MQW multi-quantum well active layer 103, a p-AIGaInP confinement layer 104, and a p-GaP window layer 105, and a metal electrode layer 109 is directly disposed on the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/38H01L33/00
CPCH01L33/0062H01L33/387H01L2933/0016
Inventor 张银桥潘彬
Owner NANCHANG KAIXUN PHOTOELECTRIC CO LTD
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