Treating agent after film formation of photoelectric absorption conversion layer of CIGS thin-film solar cell and use method thereof

Abstract

The invention provides a treating agent after film formation of a photoelectric absorption conversion layer of a CIGS thin-film solar cell. The treating agent is formed by mixing the following ingredients: water, sodium hydroxide, potassium hydroxide, ferric chloride, thiourea and ammonium hydroxide. The use method comprises the following steps: stirring and heating the treating agent to 40-90 DEG C; immersing a substrate with a solar cell CIGS photoelectric absorption conversion layer film into the treating agent for 20-60 minutes, and constantly swinging so as to enable the ingredients of the treating agent at the periphery of the thin film to be uniform; taking out the treated substrate, repeatedly flushing with deionized water until the resistance value of the deionized water is not less than 10 M ohm; removing residual water spots on the substrate by use of a mechanical spin-drying method, and baking for 10 minutes in an oven with the temperature of 150 DEG C . By virtue of utilizing the treating method and the use method which are provided by the invention to treat the photoelectric absorption conversion layer, precipitation of copper element in the thin film and reaction between surface copper element and oxygen are inhibited, so that the conversion efficiency is improved and an aging phenomenon of the thin film is avoided.

Description

technical field [0001] The invention relates to a semiconductor thin film processing technology, in particular to a processing agent and a use method for a photoelectric absorption conversion layer of a copper indium gallium selenium thin film solar cell after film formation. Background technique [0002] Copper indium gallium selenide thin film solar cell is a new type of high efficiency thin film solar cell. The photoelectric absorption and conversion layer of the copper indium gallium selenide thin film solar cell is a compound semiconductor thin film composed of four elements: copper, indium, gallium and selenium. This layer of copper indium gallium selenide compound semiconductor film has a decisive impact on the efficiency of copper indium gallium selenide thin film solar cells. How to obtain high quality copper indium gallium selenide compound semiconductor films is a key issue to effectively improve the conversion efficiency of copper indium gallium selenide thin fil...

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Problems solved by technology

At the same time, the copper indium gallium selenide compound semiconductor thin film generally can only stay in the air environment for a few hours after the film is formed. If the residence time is too long, it will cause the so-called "aging" phenomenon of the film, which will eventually seriously affect the performance of the copper indium gallium selenide thin film. The photoelectric conversion efficiency of solar cells can even cause the failure of the entire battery. This characteristic of copper indium gallium selenide compound semiconductor thin films has caused difficulties in large-scale industrial production

At present, there is no ideal treatment method for the above-mentioned semiconductor thin film

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