Preparation method for LED chip capable of forming light spots with specific planar geometric patterns through illumination, and structure of LED chip

Abstract

The invention discloses a preparation method for an LED chip capable of forming light spots with specific planar geometric patterns through illumination, and a structure of the LED chip. The structure of the LED chip comprises a base plate layer, wherein the LED thin film on the growth substrate is transferred to the base plate layer; a complementary electrode layer, a reflective metal contact layer and a bonding protection layer are arranged between the base plate layer and the LED thin film from upper to lower in sequence; an n electrode is positioned on the LED thin film. Due to the complementary electrode layer, the shape design of the n electrode, and the differences of the metal reflectivity, the chip region (or a region without the complementary electrode layer) is high in luminance, wherein the chip region is corresponding to the reflective metal contact layer which is high in reflectivity and capable of forming ohmic contact with the LED thin film; the chip region (or a region with the complementary electrode layer) is low in luminance, wherein the chip region is corresponding to the bonding protection layer which is low in reflectivity and cannot form ohmic contact with the LED thin film easily, so that the LED chip can form the light spots with specific planar geometric patterns through illumination; and the planar geometric patterns are specific patterns or specific characters.

Description

technical field [0001] The invention relates to a semiconductor light-emitting device and a preparation method thereof, in particular to a preparation method and structure of an LED chip irradiating light spots of a specific plane geometric figure. Background technique [0002] Light-emitting diodes (LEDs) have been widely used in various lighting fields since their development, and are gradually becoming intelligent and diversified. In recent years, the light quality of LED lighting has been put forward higher requirements, especially in the fields of mobile lighting, entertainment lighting and other fields, there are diversified requirements for the light spots of LED chips. For example, a standard circular light spot in mobile lighting, a light spot with a special shape or containing various texts in entertainment lighting, etc. At present, the light spots that meet the above specific requirements are usually designed during the packaging or lamp manufacturing process. S...

AI Technical Summary

Problems solved by technology

For traditional front-mounted LED chips, the p-electrode and n-electrode are on the same side of the LED film and are located on the light-emitting surface. The light is emitted from the surroundings through the transparent substrate, and the front side is used to emit light from five sides. In this way, the spatial distribution of the emitted light is uneven. (The light spot is not good), the electrode blocks the light, and is located on the light-emitting surface, resulting in a relatively weak light intensity in the normal direction, mainly relying on the side light

For LED chips with a flip-chip structure, the light-emitting surface is the back (so it is called flip-chip compared to the front-mounted structure), and the p-electrode and n-electrode are still located on the same side and are directly connected to the substrate (heat sink), avoiding the need for electrodes in the front-mounted structure. The light is blocked and located on the light-emitting surface, which leads to the disadvantage of weak normal light intensity, but it also emits light from five sides, and all the emitted light needs to pass through the substrate to exit, and the spatial distribution of the emitted light is still uneven.

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