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Knittable full-carbon memory storage device, preparation method therefor, and application

A memory and memory technology, applied in the field of new electronic devices and preparation, can solve the problems of low device switching, unable to meet the multiple reading and writing of wearable memory storage devices, etc., and achieve long switching life, good flexibility, and high switching ratio. Effect

Active Publication Date: 2016-06-29
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Recently, Sun et al. wrapped graphene oxide on the surface of carbon nanotube fibers and woven the obtained fibers with each other to obtain a non-volatile memory device that can only be written once (write-once-read-many-times) , but the switching of the device is relatively low, about 10 3 -10 4 , which cannot meet the requirement that the data in the wearable memory storage device should be able to read and write multiple times

Method used

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  • Knittable full-carbon memory storage device, preparation method therefor, and application
  • Knittable full-carbon memory storage device, preparation method therefor, and application
  • Knittable full-carbon memory storage device, preparation method therefor, and application

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preparation example Construction

[0040] Another aspect of the present invention provides a preparation method for preparing the woven all-carbon fiber memory storage device. In a typical embodiment, the preparation method includes: using graphene oxide powder as raw material, forming Acidic graphene oxide aqueous solution, wrap graphene oxide on the surface of flexible carbon nanotube fibers by solution impregnation, reduce graphene oxide by heat treatment, and finally cross weave the obtained functionalized carbon fiber tube fibers and connect them Electrodes, get weavable full carbon memory storage.

[0041] The memory storage device involved in the invention has high switching ratio, fast switching speed, long switching life, good device reproducibility, simple preparation process and less requirements on preparation equipment.

[0042] Further, see figure 1 , as a preferred embodiment of the present invention, it can use commercial graphene oxide powder (A) as raw material, add water (B), inorganic acid ...

Embodiment 1

[0054] Example 1 Preparation of acidic graphene oxide: Add 3.2 mg of commercial graphene oxide as a starting material to 4 ml of deionized water, and add 50 ul of 97% concentrated HNO 3 The pH value of the solution was adjusted to 1, and then the obtained solution was placed in an ultrasonic pool with a power of 300W for 30 minutes to obtain acidic graphene oxide with a concentration of 0.8 mg / ml at pH=1. then follow figure 1 The method in the technical route obtains a woven all-carbon memory storage device, and the morphology of graphene wrapped in carbon nanofibers is as follows: Figure 4 The switching ratio and threshold voltage of the device are shown in Table 1.

[0055] Table 1: Properties of memory devices prepared with 0.8 mg / ml starting material in Example 1

[0056] Sample serial number

Embodiment 2

[0057] Example 2 Preparation of acidic graphene oxide: Add 1.6 mg of commercial graphene oxide as a starting material to 4 ml of deionized water, and add 50 ul of 97% concentrated HNO 3 The pH value of the solution was adjusted to 1, and then the obtained solution was placed in an ultrasonic pool with a power of 300W for 30 minutes to obtain acidic graphene oxide with a concentration of 0.4 mg / ml at pH=1. then follow figure 1 The method in the technical route obtains a woven all-carbon memory storage device, and the switching ratio and threshold voltage of the device are shown in Table 2.

[0058] Table 2: Memory device properties prepared with 0.4mg / ml starting material in Example 2

[0059] Sample serial number

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Abstract

The invention discloses a knittable full-carbon memory storage device, a preparation method therefor, and an application. The storage device comprises carbon nano tube fibers wrapped by acidic thermal reduction graphene, and an electrode. The preparation method comprises the steps: taking oxidized graphene as a raw material, forming acidic oxidized graphene aqueous solution through adjusting a pH value, wrapping the surfaces of flexible carbon nano tube fibers with the oxidized graphene through employing a method of solution immersion, carrying out the reduction of the oxidized graphene through thermal treatment, weaving the obtained functional carbon nano tube fibers in an intersected manner, connecting an upper electrode, and forming the storage device. The storage device provided by the invention is high in switch ratio, is high in switching speed, is long in switch service life, is good in flexibility, is easy to machine and form various types of braided fabrics, is especially suitable to serve as wearable electronic equipment, and is simple in manufacturing technology. The raw material is easy to obtain, and the device is simple. Moreover, the device is low in cost, and is suitable for large-scale production.

Description

technical field [0001] The invention relates to a memory storage, in particular to a weavable full-carbon memory storage, a preparation method and application thereof, and belongs to the field of new electronic devices and preparations. Background technique [0002] At present, wearable electronic devices have become an important development direction in the field of consumer electronics, for example, the "Moto360 smart watch" recently launched by Motorola Inc., the "AppleWatch smart watch" developed by Apple Inc., Xiaomi The "smart bracelet" launched by the company (Xiaomi Inc.) and so on. In future life, flexible and weavable fiber-like smart devices can be combined with the clothes people usually wear, which has great application prospects. For these flexible and weavable smart devices, flexible fiber devices with memory storage function are one of the important components to realize this kind of wearable smart devices similar to clothes. In recent years, due to its uni...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/24
Inventor 李清文李儒
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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