Method and device for checking disturbed nonvolatile storage unit

Abstract

The invention provides a method for checking a disturbed nonvolatile storage unit. The method is applied to the nonvolatile storage unit and comprises the following steps: a) setting a count value of a counter as a preset value; b) receiving an erase block instruction, wherein the erase block instruction comprises address information of a corresponding erase block; c) executing erase operation according to the address information of the corresponding erase block; d) according to the current count value of the counter, determining a corresponding disturb block in the same big block with the corresponding erase block; e) carrying out repair operation on the corresponding disturb block; and f) adding the count value of the counter with one and returning to the step b). According to the method and the device disclosed by the invention, not only can the time be saved, but also the disturbed storage unit can be checked and repaired timely and effectively; and meanwhile, the burning time and cost of a chip after tape-out can be greatly reduced, thereby pushing a product to a customer timely.

Description

technical field [0001] The invention relates to the field of electronics, in particular to a method and device for checking that a non-volatile storage unit is disturbed. Background technique [0002] NORflash flash memory is a type of non-volatile memory that can be erased, written and reprogrammed in arrays of memory cells called "blocks." Write operations to any flash device can only be performed in empty or erased cells. Therefore, in most cases, an erase must be performed before a write operation. [0003] The principle of Norflash storage unit programming and writing is as follows: figure 1 As shown, a high voltage is applied to the gate and drain, and the floating gate is charged through the source through hot electron injection (hotelectron injection). [0004] Erasing principle such as figure 2 As shown, a negative high voltage is applied to the gate, a positive high voltage is applied to the well, and the charge on the floating gate is released by using the F-...

AI Technical Summary

Problems solved by technology

Since it is impossible to determine when and where the storage unit will be disturbed, the repair operation in the traditional method is often to search all the storage units that may be disturbed. For the design of combining several blocks into a block group, this is quite time consuming and extremely inefficient

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