Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

High-power, tunable and narrow linewidth external cavity semiconductor laser

A semiconductor and laser technology, applied in the field of high-power tunable narrow-linewidth external cavity semiconductor lasers, can solve problems such as difficulty in satisfying single-mode, high-power high-beam quality, narrow-linewidth, high coherence, and wavelength tunability, etc. Fast and slow axis divergence angle, narrow line width, the effect of avoiding disturbance

Inactive Publication Date: 2016-06-15
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
View PDF7 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems existing in the prior art, the present invention provides a high-power tunable narrow-linewidth external-cavity semiconductor laser, which solves the problem that existing lasers are difficult to meet single-mode, high-power, high-beam-quality, narrow-linewidth, High coherence, wavelength tunable problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-power, tunable and narrow linewidth external cavity semiconductor laser
  • High-power, tunable and narrow linewidth external cavity semiconductor laser
  • High-power, tunable and narrow linewidth external cavity semiconductor laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0024] like figure 1 As shown, a high-power tunable narrow-linewidth external cavity semiconductor laser includes: a gain chip 1, a tunable external cavity 2, a tilted power amplifier 3 with a curved waveguide; the gain chip 1, the tunable The external cavity 2 and the inclined power amplifier 3 with a curved waveguide constitute a complete optical system.

[0025] The gain chip 1 is used to generate a single-mode wide-spectrum light source. In order to realize narrow linewidth laser output, the ridge waveguide 4 of the gain chip must adopt a single-mode waveguide or an approximate single-mode waveguide. Therefore, the ridge waveguide 4 of the gain chip in the present invention adopts a narrow ridge semiconductor refractive index waveguide.

[0026] like figure 2 As shown, the tunable external cavity 2 functions to compress the intrinsic ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A high-power, tunable and narrow linewidth external cavity semiconductor laser belongs to the technical field of a semiconductor laser and aims to solve the problem that the comprehensive requirements such as mode characteristic, beam quality, linewidth, coherence and tunability of a single laser are difficult to be met. The high-power, tunable and narrow linewidth external cavity semiconductor laser is formed by directly coupling a gain chip, a tunable external cavity and an inclined power amplifier with a curved waveguide through an end surface, wherein the gain chip is used for achieving laser output of single-mode wide spectrum; the tunable external cavity adopts a silicon on insulator (SOI) material; the linewidth is narrowed by increasing cavity length and a quality factor Q of a laser resonant cavity; the tunability is achieved by the adoption of refractive index of a thermal modulation material; and by the arrangement of the inclined power amplifier with curved waveguide, laser output with high power and high beam quality is achieved under ensuring the stability of the gain chip and the tunable external cavity. By the high-power, tunable and narrow linewidth external cavity semiconductor laser, a novel semiconductor laser integrating a single mode, high power, high beam quality, narrow linewidth, high coherence, tunable wavelength and the like is achieved, and the high-power, tunable and narrow linewidth external cavity semiconductor laser has important application prospect in the fields such as space laser communication and laser radar.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, in particular to a high-power tunable narrow-linewidth external-cavity semiconductor laser. Background technique [0002] Traditional semiconductor lasers are widely used in optical communication, optical information storage, 3D laser printing, optical measurement, solid-state laser pump source, laser molecular spectroscopy and other fields. However, due to the characteristics of line width, beam quality, brightness, and tuning ability of a single laser, it cannot be used in high-speed, high-precision and long-distance space laser communication, basic atomic clocks, lidar, quantum information science, precision spectrum measurement and other fields. . Therefore, in order to meet the above applications, it is necessary to prepare a new type of semiconductor laser that integrates single-mode, high power, high beam quality, narrow linewidth, high coherence, and wavelength tunability. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/14H01S5/06
CPCH01S5/14H01S5/06
Inventor 秦莉高峰陈泳屹宁永强
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products