Schottky diode

A technology of Schottky diodes and anodes, which is applied to electrical components, electrical solid devices, circuits, etc., and can solve problems such as easy bending or breaking of pins, easy insertion of pins too deep, unstable welding, etc.

Inactive Publication Date: 2016-06-08
NANTONG MINICHIP MICRO ELECTRONICS
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] 1) The pins are easily bent or broken;
[0006] 2) The pins are easy to be inserted too deep when inlaid, resulting in unstable welding
[0007] These shortcomings have seriously affected the service life of the diode

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The Schottky diode of the present invention comprises an N epitaxial layer arranged on the top anode metal, an N epitaxial layer arranged below the anode metal and connected to the anode metal, an N-type semiconductor substrate arranged under the N epitaxial layer and connected to the N epitaxial layer, and The N cathode layer below the N-type semiconductor substrate and connected to the N-type semiconductor substrate, the cathode metal located below the N cathode layer and connected to the N cathode layer, the three pins arranged on the cathode metal, and the anode lead in the middle feet, both sides are cathode pins, the anode metal material is molybdenum, the N epitaxial layer, N-type semiconductor substrate and N cathode layer are all silicon chips, and the two sides of the anode metal are provided with silicon dioxide Oxidation insulation layer, the anode pin and the cathode pin are provided with limiting blocks. Both the anode pin and the cathode pin are prepared ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a Schottky diode which comprises anode metal, an N epitaxial layer, an N-type semiconductor substrate, an N cathode layer, cathode metal and three pins. The anode metal is arranged at the top, the N epitaxial layer is arranged below the anode metal and connected with the same, the N-type semiconductor substrate is arranged below the N epitaxial layer and connected with the same, the N cathode layer is arranged below the N-type semiconductor substrate and connected with the same, the cathode metal is arranged below the N cathode layer and connected with the same, the three pins are arranged on the cathode metal and include an anode pin in the middle and cathode pins on two sides, the anode metal is molybdenum, each of the N epitaxial layer, the N-type semiconductor substrate and the N cathode layer is a silicon wafer, silica oxidized insulating layers are arranged on two sides of the anode metal, and a limiting block is arranged on the anode pin and the cathode pins. The Schottky diode has the advantages that the pins are less prone to being bent or broken, less prone to being inserted too deeply when being embedded and free of causing instability in welding.

Description

technical field [0001] The invention relates to a Schottky diode and belongs to the technical field of semiconductors. Background technique [0002] A diode is an electronic component, a device with two electrodes that only allows current to flow in one direction. Many uses are for its rectification function. The varactor diode (VaricapDiode) is used as an electronic adjustable capacitor. The current directionality of most diodes is usually called "rectifying" function. The most common function of a diode is to only allow current to pass in a single direction (called forward bias), and to block it when it is reversed (called reverse bias). So a diode can be thought of as the electronic version of a check valve. [0003] There are many types of diodes, which can be divided into germanium diodes (Ge tubes) and silicon diodes (Si tubes) according to the semiconductor materials used. According to their different uses, they can be divided into detection diodes, rectifier diod...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L23/48
CPCH01L29/872H01L23/48
Inventor 周明
Owner NANTONG MINICHIP MICRO ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products